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Metal-to-insulator transition in an Anderson insulator with Kondo impurities

Weidong Zhang* and Elliott R. Brown

Richard P. Mirin

  • Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435, USA

  • Applied Physics Division, National Institute of Standards and Technology, Boulder, Colorado 80305, USA

  • *Also at Terapico LLC, Beavercreek, Ohio 45431, USA; wzzhang@fastmail.fm
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Phys. Rev. Research 4, 043040 – Published 17 October, 2022

DOI: https://doi.org/10.1103/PhysRevResearch.4.043040

Abstract

We report a voltage-controlled critical behavior observed in a GaAs epitaxial structure containing a dense array of ErAs nanoparticles. When fabricated with metal electrodes, the structure displays a voltage- and temperature-dependent metal-to-insulator transition and strong hysteresis in the current versus voltage and versus temperature characteristics, with critical temperatures as high as 77 K. Furthermore, we observed a diverging rms deviation of the electrical conductance with respect to the critical bias voltage, which further supports the existence of a phase transition. The insulating phase is governed by Efros-Shklovskii variable range hopping, and the conductance reduces beyond instrument limits as the temperature drops toward zero; supporting it is an Anderson insulator. The metallic phase displays a conductance minimum at a critical temperature behaving similarly to that of single quantum dot due to Kondo resonance, and then the conductance increases as the temperature continues to drop. Furthermore, the metallic phase displays a colossal magnetoresistance under a weak magnetic field at 77 K while the insulating phase does not. And the metal-to-insulator phase transition can be induced by the magnetic field showing a critical discontinuity, similar to that versus temperature and voltage. We propose that the metal-to-insulator phase transition can be explained by the concept of an Anderson insulator with Kondo impurities.

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References (71)

  1. S. Gupta, S. Sethi, and P. K. Bhattacharya, Picosecond carrier lifetime in erbium-doped-GaAs, Appl. Phys. Lett. 62, 1128 (1993).
  2. S. Sethi and P. K. Bhattacharya, Characteristics and device applications of erbium doped III-V semiconductors grown by molecular beam epitaxy, J. Electron. Mater. 25, 467 (1996).
  3. C. Kadow, A. W. Jackson, A. C. Gossard, S. Matsuura, and G. A. Blake, Self-assembled ErAs islands in GaAs for optical heterodyne THz generation, Appl. Phys. Lett. 76, 3510 (2000).
  4. M. Griebel, J. H. Smet, D. C. Driscoll, J. Kuhl, C. A. Diez, N. Freytag, C. Kadow, A. C. Gossard, and K. von Klitzing, Tunable subpicosecond optoelectronic transduction in superlattices of self-assembled ErAs nanoislands, Nat. Mater. 2, 122 (2003).
  5. I. Poole, K. E. Singer, A. R. Peaker, and A. C. Wright, Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs, J. Cryst. Growth 121, 121 (1992).
  6. J. M. Zide, D. O. Klenov, S. Stemmer, A. C. Gossard, G. Zeng, J. E. Bowers, D. Vashaee, and A. Shakouri, Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles, Appl. Phys. Lett. 87, 112102 (2005).
  7. C. J. Palmstrøm, N. Tabatabaie, and S. J. Allen, Epitaxial growth of ErAs on (100) GaAs, Appl. Phys. Lett. 53, 2608 (1988).
  8. J. Zimmerman, E. R. Brown, and A. C. Gossard, Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAs, J. Vac. Sci. Technol. B 23, 1929 (2005).
  9. S. J. Allen, N. Tabatabaie, C. J. Palmstrøm, G. W. Hull, T. Sands, F. DeRosa, H. L. Gilchrist, and K. C. Garrison, ErAs Epitaxial Layers Buried in GaAs: Magnetotransport and Spin-Disorder Scattering, Phys. Rev. Lett. 62, 2309 (1989).
  10. E. R. Brown, A. Bacher, D. Driscoll, M. Hanson, C. Kadow, and A. C. Gossard, Evidence for a Strong Surface-Plasmon Resonance on ErAs Nanoparticles in GaAs, Phys. Rev. Lett. 90, 077403 (2003).
  11. J. Middendorf and E. Brown, ErAs:GaAs THz pulse generation using extrinsic photoconductivity at 1550 nm, Opt. Express 20, 16504 (2012).
  12. A. Mingardi, W.-D. Zhang, E. R. Brown, A. D. Feldman, T. E. Harvey, and R. P. Mirin, High power generation of THz from 1550-nm photoconductive emitters, Opt. Express 26, 14472 (2018).
  13. W.-D. Zhang, E. R. Brown, A. Mingardi, R. P. Mirin, N. Jahed, and D. Saeedkia, THz superradiance from a GaAs:ErAs quantum dot array at room temperature, Appl. Sci. 9, 3014 (2019).
  14. T. F. Rosenbaum, R. F. Milligan, M. A. Paalanen, G. A. Thomas, R. N. Bhatt, and W. Lin, Metal-insulator transition in a doped semiconductor, Phys. Rev. B 27, 7509 (1983).
  15. N. Mott, The mobility edge since 1967, J. Phys. C: Solid State Phys. 20, 3075 (1987).
  16. L. J. Geerligs, D. V. Averin, and J. E. Mooij, Observation of Macroscopic Quantum Tunneling through the Coulomb Energy Barrier, Phys. Rev. Lett. 65, 3037 (1990).
  17. Y. Hirano, Y. Segawa, F. Yamada, T. Kuroda-Sowa, T. Kawai, and T. Matsumoto, Mn12 molecular redox array exhibiting one-dimensional Coulomb blockade behavior, J. Phys. Chem. C 116, 9895 (2012).
  18. A. Zabet-Khosousi, P. E. Trudeau, Y. Suganuma, A. A. Dhirani, and B. Statt, Metal to Insulator Transition in Films of Molecularly Linked Gold Nanoparticles, Phys. Rev. Lett. 96, 156403 (2006).
  19. A. A. Middleton and N. S. Wingreen, Collective Transport in Arrays of Small Metallic Dots, Phys. Rev. Lett. 71, 3198 (1993).
  20. G. Landwehr and W. Ossau, editors, Universal conductance fluctuations and telegraph noise spectroscopy to investigate the magnetisation of self-organized ErAs quantum frequencies, in High Magnetic Fields in the Physics of Semiconductors: Proceedings of the 12th International Conference (World Scientific, Würzburg, Germany, 1997).
  21. D. R. Schmidt, A. G. Petukhov, M. Foygel, J. P. Ibbetson, and S. J. Allen, Fluctuation Controlled Hopping of Bound Magnetic Polarons in ErAs:GaAs Nanocomposites, Phys. Rev. Lett. 82, 823 (1999).
  22. K. M. Hanif, R. W. Meulenberg, and G. F. Strouse, Magnetic ordering in doped Cd1−xCoxSe diluted magnetic quantum dots, J. Am. Chem. Soc. 124, 11495 (2002).
  23. M. Holub, S. Chakrabarti, S. Fathpour, P. Bhattacharya, Y. Lei, and S. Ghosh, Mn-doped InAs self-organized diluted magnetic quantum-dot layers with Curie temperatures above 300 K, Appl. Phys. Lett. 85, 973 (2004).
  24. F.-X. Xiu, Y. Wang, J.-Y. Kim, A. Hong, J.-S. Tang, A. P. Jacob, J. Zou, and K.-L. Wang, Electric-field-controlled ferromagnetism in high-Curie-temperature Mn0.05Ge0.95 quantum dots, Nat. Mater. 9, 337 (2010).
  25. J. M. Pientka, R. Oszwaldowski, A. G. Petukhov, J. E. Han, and I. Žutić, Magnetic ordering in quantum dots: Open versus closed shells, Phys. Rev. B 92, 155402 (2015).
  26. E. R. Brown, A. Mingardi, W.-D. Zhang, A. D. Feldman, T. E. Harvey, and R. P. Mirin, Abrupt dependence of ultrafast extrinsic photoconductivity on Er fraction in GaAs:Er, Appl. Phys. Lett. 111, 031104 (2017).
  27. See Supplemental Material at http://link.aps.org/supplemental/10.1103/PhysRevResearch.4.043040 for more information.
  28. M. A. Scarpulla, J. M. O. Zide, J. M. LeBeau, C. G. V. de Walle, A. C. Gossard, and K. T. Delaney, Near-infrared absorption and semimetal-semiconductor transition in 2 nm ErAs nanoparticles embedded in GaAs and AlAs, Appl. Phys. Lett. 92, 173116 (2008).
  29. J. K. Kawasaki, R. Timm, K. T. Delaney, E. Lundgren, A. Mikkelsen, and C. J. Palmstrøm, Local Density of States and Interface Effects in Semimetallic ErAs Nanoparticles Embedded in GaAs, Phys. Rev. Lett. 107, 036806 (2011).
  30. N. F. Mott, Conduction in Non-Crystalline Materials (Clarendon Press, Oxford, 1993).
  31. B. I. Shklovskii and A. L. Efros, Electronic Properties of Doped Semiconductors (Springer, Verlag Berlin Heidelberg, 1984).
  32. T. B. Tran, I. S. Beloborodov, X. M. Lin, T. P. Bigioni, V. M. Vinokur, and H. M. Jaeger, Multiple Cotunneling in Large Quantum Dot Arrays, Phys. Rev. Lett. 95, 076806 (2005).
  33. A. L. Efros and B. I. Shklovskii, Coulomb gap and low temperature conductivity of disordered systems, J. Phys. C: Solid State Phys. 8, L49 (1975).
  34. A. J. Heeger, The critical regime of the metal-insulator transition in conducting polymers: Experimental studies, Phys. Scr., T 102, 30 (2002).
  35. H. E. Stanley, Introduction to Phase Transitions and Critical Phenomena (Oxford University Press, New York Oxford, 1971).
  36. F. Jegerlehner, Critical Phenomena and the Renormalization Group, Lecture in Troisième Cycle de la Physique en Suisse Romande (Universität Bielefeld, Bielefeld, 1976).
  37. M. A. Anisimov, Letter to the editor: Fifty years of breakthrough discoveries in fluid criticality, Int. J. Thermophys. 32, 2001 (2011).
  38. M. R. Oliver, J. O. Dimmock, A. L. McWhorter, and T. B. Reed, Conductivity studies in europium oxide, Phys. Rev. B 5, 1078 (1972).
  39. V. Podzorov, M. Uehara, M. E. Gershenson, T. Y. Koo, and S.-W. Cheong, Giant 1/f noise in perovskite manganites: Evidence of the percolation threshold, Phys. Rev. B 61, R3784 (2000).
  40. V. Podzorov, M. E. Gershenson, M. Uehara, and S.-W. Cheong, Phase separation and 1/f noise in low-TMI colossal magnetoresistance manganites, Phys. Rev. B 64, 115113 (2001).
  41. V. Podzorov, B. G. Kim, V. Kiryukhin, M. E. Gershenson, and S.-W. Cheong, Martensitic accommodation strain and the metal-insulator transition in manganites, Phys. Rev. B 64, 140406(R) (2001).
  42. Y. Tokura, Correlated electrons: Science to technology, JSAP Int. 2000(2), 12 (2000).
  43. P. W. Anderson, Absence of diffusion in certain random lattices, Phys. Rev. 109, 1492 (1958).
  44. E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Scaling Theory of Localization: Absence of Quantum Diffusion in Two Dimensions, Phys. Rev. Lett. 42, 673 (1979).
  45. A. Ioffe and A. Regel, Non-crystalline, amorphous and liquid electronic semiconductors, Prog. Semicond. 4, 237 (1960).
  46. A. Zabrodskiĭ and K. Zinov'eva, Low-temperature conductivity and metal-insulator transition in compensate n-Ge, Zh. Eksp. Teor. Fiz. 86, 727 (1984).
  47. D. Goldhaber-Gordon, H. Shtrikman, D. Mahalu, D. Abusch-Magder, U. Meirav, and M. A. Kastner, Kondo effect in a single electron transistor, Nature (London) 391, 156 (1998).
  48. S. M. Cronenwett, T. H. Oosterkamp, and K. P. Kouwenhoven, Tunable Kondo effect in quantum dots, Science 281, 540 (1998).
  49. F. Simmel, R. H. Blick, J. P. Kotthaus, W. Wegscheider, and M. Bichler, Anomalous Kondo Effect in a Quantum Dot at Nonzero Bias, Phys. Rev. Lett. 83, 804 (1999).
  50. S. Sasaki, S. D. Franceschi, J. M. Elzerman, W. G. V. der Wiel, M. Eto, S. Tarucha, and L. P. Kouwenhoven, Kondo effect in an integer-spin quantum dot, Nature (London) 405, 764 (2000).
  51. R. M. Potok, I. G. Rau, H. Shtrikman, Y. Oreg, and D. Goldhaber-Gordon, Observation of the two channel Kondo effect, Nature (London) 446, 167 (2007).
  52. L. Kouwenhoven and L. Glazman, Revival of the Kondo effect, Phys. World 14, 33 (2001).
  53. M. Pustilnik and L. I. Glazman, Kondo effect in quantum dots, J. Phys.: Condens. Matter 16, R513 (2004).
  54. M. Grobis, I. G. Rau, R. M. Potok, and D. Goldhaber-Gordon, The Kondo effect in mesoscopic quantum dots, in Handbook of Magnetism and Advanced Magnetic Materials (John Wiley and Sons, 2007).
  55. J. Kondo, Resistance minimum in dilute magnetic alloys, Prog. Theor. Phys. 32, 37 (1964).
  56. A. A. Abrikosov, Electron scattering on magnetic impurities in metals and anomalous resistivity effects, Phys. Phys. Fiz. 2, 5 (1965).
  57. H. Suhl, Dispersion theory of the Kondo effect, Phys. Rev. 138, A515 (1965).
  58. Y. Nagaoka, Self-consistent treatment of Kondo's effect in dilute alloys, Phys. Rev. 138, A1112 (1965).
  59. P. W. Anderson, Localized magnetic states in metals, Phys. Rev. 124, 41 (1961).
  60. P. W. Anderson, A poor man's derivation of scaling laws for the Kondo problem, J. Phys. C: Solid State Phys. 3, 2436 (1970).
  61. T. Komesu, H.-K. Jeong, J. Choi, C. N. Borca, P. A. Dowben, A. G. Petukhov, B. D. Schultz, and C. J. Palmstrøm, Electronic structure of ErAs (100), Phys. Rev. B 67, 035104 (2003).
  62. T.-K. Ng and P. A. Lee, On-Site Coulomb Repulsion and Resonant Tunneling, Phys. Rev. Lett. 61, 1768 (1988).
  63. L. I. Glazman and M. E. Raikh, Resonant Kondo transparency of a barrier with quasilocal impurity states, JETP Lett. 47, 452 (1988).
  64. S. Kettemann, E. R. Mucciolo, and I. Varga, Critical Metal Phase at the Anderson Metal-Insulator Transition with Kondo Impurities, Phys. Rev. Lett. 103, 126401 (2009).
  65. S. S. Kettemann and M. E. Raikh, Localization Length in Anderson Insulator with Kondo Impurities, Phys. Rev. Lett. 90, 146601 (2003).
  66. D. J. Oliver, Electrical properties of n-type gallium arsenide, Phys. Rev. 127, 1045 (1962).
  67. E. Schöll, Bistability and nonequilibrium phase transitions in a semiconductor recombination model with impact ionization of donors, Z. Phys. B 46, 23 (1982).
  68. F. Karel, J. Oswald, J. Pastrňák, and Peteříček, Impurity breakdown and electric-field-dependent luminescence in MBE and VPE GaAs layers, Semicond. Sci. Technol. 7, 203 (1992).
  69. K. Aoki, T. Kondo, and T. Watanabe, Cross-over instability and chaos of hysteretic I-V curve during impurity avalanche breakdown in n-GaAs under longitudinal magnetic field, Solid State Commun. 77, 91 (1991).
  70. V. A. Samuilov, V. K. Ksenevich, G. Remenyi, G. Kiss, and B. Podor, Impact ionization breakdown of n-GaAs in high magnetic fields, Semicond. Sci. Technol. 14, 1084 (1999).
  71. S. Choi, B.-J. Kim, Y.-W. Lee, Y.-S. Lim, J. Choi, and H.-T. Kim, Control of current-jump induced by voltage, temperature, light in p-type GaAs: Programmable critical temperature sensor, Appl. Phys. Lett. 95, 231910 (2009).

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Phys. Rev. Research 4, 043040– Published 17 October, 2022
  • Received 5 November 2021
  • Revised 4 May 2022
  • Accepted 3 August 2022
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