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Mapping the phase diagram of the quantum anomalous Hall and topological Hall effects in a dual-gated magnetic topological insulator heterostructure

Run Xiao1,*, Di Xiao1,*, Jue Jiang1,*, Jae-Ho Shin1, Fei Wang1, Yi-Fan Zhao1, Ruo-Xi Zhang1, Anthony Richardella1,2, Ke Wang2 et al.

Morteza Kayyalha3, Moses H. W. Chan1, Chao-Xing Liu1, Cui-Zu Chang1, and Nitin Samarth1,†

  • 1Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
  • 2Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA
  • 3Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

  • *These authors contributed equally to this work.
  • †nsamarth@psu.edu

Phys. Rev. Research 3, L032004 – Published 6 July, 2021

DOI: https://doi.org/10.1103/PhysRevResearch.3.L032004

Abstract

We use magnetotransport in dual-gated magnetic topological insulator heterostructures to map out a phase diagram of the topological Hall and quantum anomalous Hall effects as a function of the chemical potential (primarily determined by the back gate voltage) and the asymmetric potential (primarily determined by the top gate voltage). A theoretical model that includes both surface states and valence band quantum well states allows the evaluation of the variation of the Dzyaloshinskii-Moriya interaction and carrier density with gate voltages. The qualitative agreement between experiment and theory provides strong evidence for the existence of a topological Hall effect in the system studied, opening up a route for understanding and manipulating chiral magnetic spin textures in real space.

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