Reuse & Permissions

It is not necessary to obtain permission to reuse this article or its components as it is available under the terms of the Creative Commons Attribution 4.0 International license. This license permits unrestricted use, distribution, and reproduction in any medium, provided attribution to the author(s) and the published article's title, journal citation, and DOI are maintained. Please note that some figures may have been included with permission from other third parties. It is your responsibility to obtain the proper permission from the rights holder directly for these figures.

Export citation

Export citation

Choose format for download:

Download Citation
  • Open Access

Dirac node engineering and flat bands in doped Dirac materials

Anna Pertsova1, Peter Johnson2, Daniel P. Arovas3, and Alexander V. Balatsky1,4

  • 1Nordita, Roslagstullsbacken 23, SE-106 91 Stockholm, Sweden
  • 2Condensed Matter Physics Materials Science Department, Brookhaven National Laboratory, Upton, New York 11973-5000, USA
  • 3Department of Physics, University of California, San Diego, La Jolla, California 92093, USA
  • 4Department of Physics, University of Connecticut, Storrs, Connecticut 06269, USA

Phys. Rev. Research 3, 033001 – Published 1 July, 2021

DOI: https://doi.org/10.1103/PhysRevResearch.3.033001

Abstract

We suggest the tried approach of impurity band engineering to produce flat bands and additional nodes in Dirac materials. We show that surface impurities give rise to nearly flat impurity bands close to the Dirac point. The hybridization of the Dirac nodal state induces the splitting of the surface Dirac nodes and the appearance of new nodes at high-symmetry points of the Brillouin zone. The results are robust and not model dependent: our tight-binding calculations are supported by a low-energy effective model of a topological insulator surface state hybridized with an impurity band. Finally, we address the effects of electron-electron interactions between localized electrons on the impurity site. We confirm that the correlation effects, while producing band hybridization and the Kondo effect, keep the hybridized band flat. Our findings open up prospects for impurity band engineering of nodal structures and flat-band correlated phases in doped Dirac materials.

View figure in article

Physics Subject Headings (PhySH)

Article Text

References (31)

  1. T. Wehling, A. Black-Schaffer, and A. Balatsky, Dirac materials, Adv. Phys. 63, 1 (2014).
  2. R. Yu, W. Zhang, H.-J. Zhang, S.-C. Zhang, X. Dai, and Z. Fang, Quantized anomalous Hall effect in magnetic topological insulators, Science 329, 61 (2010).
  3. C.-Z. Chang et al., Experimental observation of the quantum anomalous Hall effect in a magnetic topological insulator, Science 340, 167 (2013).
  4. R. R. Biswas and A. V. Balatsky, Impurity-induced states on the surface of three-dimensional topological insulators, Phys. Rev. B 81, 233405 (2010).
  5. A. M. Black-Schaffer and A. V. Balatsky, Strong potential impurities on the surface of a topological insulator, Phys. Rev. B 85, 121103(R) (2012).
  6. A. M. Black-Schaffer and A. V. Balatsky, Subsurface impurities and vacancies in a three-dimensional topological insulator, Phys. Rev. B 86, 115433 (2012).
  7. A. M. Black-Schaffer, A. V. Balatsky, and J. Fransson, Filling of magnetic-impurity-induced gap in topological insulators by potential scattering, Phys. Rev. B 91, 201411(R) (2015).
  8. P. Sessi, R. R. Biswas, T. Bathon, O. Storz, S. Wilfert, A. Barla, K. A. Kokh, O. E. Tereshchenko, K. Fauth, M. Bode, and A. V. Balatsky, Dual nature of magnetic dopants and competing trends in topological insulators, Nat. Commun. 7, 12027 (2016).
  9. D. Leykam, A. Andreanov, and S. Flach, Artificial flat band systems: From lattice models to experiments, Adv. Phys.: X 3, 1473052 (2018).
  10. C. Triola, J.-X. Zhu, A. Migliori, and A. V. Balatsky, Many-body instabilities and mass generation in slow Dirac materials, Phys. Rev. B 92, 045401 (2015).
  11. R. Bistritzer and A. H. MacDonald, Moiré bands in twisted double-layer graphene, Proc. Natl. Acad. Sci. USA 108, 12233 (2011).
  12. Y. Cao, V. Fatemi, S. Fang, K. Watanabe, T. Taniguchi, E. Kaxiras, and P. Jarillo-Herrero, Unconventional superconductivity in magic-angle graphene superlattices, Nature (London) 556, 80 (2018).
  13. Y. Cao, V. Fatemi, S. Fang, K. Watanabe, T. Taniguchi, E. Kaxiras, and P. Jarillo-Herrero, Unconventional superconductivity in magic-angle graphene superlattices, Nature (London) 556, 43 (2018).
  14. K. Kobayashi, Electron transmission through atomic steps of Bi2Se3 and Bi2Te3 surfaces, Phys. Rev. B 84, 205424 (2011).
  15. A. Pertsova and C. M. Canali, Probing the wavefunction of the surface states in Bi2Se3 topological insulator: A realistic tight-binding approach, New J. Phys. 16, 063022 (2014).
  16. M. Zhong, S. Li, H.-J. Duan, L.-B. Hu, M. Yang, and R.-Q. Wang, Effect of impurity resonant states on optical and thermoelectric properties on the surface of a topological insulator, Sci. Rep. 7, 3971 (2017).
  17. W. Zhu, W. Li, Q. W. Shi, X. R. Wang, X. P. Wang, J. L. Yang, and J. G. Hou, Vacancy-induced splitting of the Dirac nodal point in graphene, Phys. Rev. B 85, 073407 (2012).
  18. L. Seixas, D. West, A. Fazzio, and S. B. Zhang, Vertical twinning of the Dirac cone at the interface between topological insulators and semiconductors, Nat. Commun. 6, 7630 (2015).
  19. Y. Xu, J. Chiu, L. Miao, H. He, Z. Alpichshev, A. Kapitulnik, R. R. Biswas, and L. A. Wray, Disorder enabled band structure engineering of a topological insulator surface, Nat. Commun. 8, 14081 (2017).
  20. I. Affleck and J. B. Marston, Large-n limit of the Heisenberg-Hubbard model: Implications for high-Tc superconductors, Phys. Rev. B 37, 3774 (1988).
  21. A. C. Hewson, The Kondo Problem to Heavy Fermions, Cambridge Studies in Magnetism (Cambridge University Press, Cambridge, 1993).
  22. D. Withoff and E. Fradkin, Phase Transitions in Gapless Fermi Systems with Magnetic Impurities, Phys. Rev. Lett. 64, 1835 (1990).
  23. C. R. Cassanello and E. Fradkin, Kondo effect in flux phases, Phys. Rev. B 53, 15079 (1996).
  24. A. M. Black-Schaffer and D. Yudin, Spontaneous gap generation on the surface of weakly interacting topological insulators using nonmagnetic impurities, Phys. Rev. B 90, 161413(R) (2014).
  25. S. Nahas, B. Sanyal, and A. M. Black-Schaffer, Spontaneous ferromagnetism and finite surface energy gap in the topological insulator Bi2Se3 from surface BiSe antisite defects, Phys. Rev. B 102, 140407(R) (2020).
  26. M. F. Islam et al., Systematics of electronic and magnetic properties in the transition metal doped Sb2Te3 quantum anomalous Hall platform, Phys. Rev. B 97, 155429 (2018).
  27. T. Yilmaz, A. Pertsova, W. Hines, E. Vescovo, K. Kaznatcheev, A. V. Balatsky, and B. Sinkovic, Gap-like feature observed in the non-magnetic topological insulators, J. Phys.: Condens. Matter 32, 145503 (2020).
  28. P. Järvinen, S. K. Hämäläinen, K. Banerjee, P. Häkkinen, M. Ijäs, A. Harju, and P. Liljeroth, Molecular self-assembly on graphene on SiO2 and h-BN substrates, Nano Lett. 13, 3199 (2013).
  29. C. Triola, A. Pertsova, R. S. Markiewicz, and A. V. Balatsky, Excitonic gap formation in pumped Dirac materials, Phys. Rev. B 95, 205410 (2017).
  30. A. Pertsova and A. V. Balatsky, Excitonic instability in optically pumped three-dimensional Dirac materials, Phys. Rev. B 97, 075109 (2018).
  31. Y. Xu, J. Zhao, C. Yi, Q. Wang, Q. Yin, Y. Wang, X. Hu, L. Wang, E. Liu, G. Xu, L. Lu, A. A. Soluyanov, H. Lei, Y. Shi, J. Luo, and Z.-G. Chen, Electronic correlations and flattened band in magnetic Weyl semimetal CoSn2S2, Nat. Commun. 11, 3985 (2020).

Outline

Information

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation