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Magnetocapacitance signatures of electrons and holes in InAs/GaSb quantum wells separated by an AlSb barrier

A. S. L. Ribeiro*, R. Schott, C. Reichl, W. Dietsche, and W. Wegscheider

  • Advanced Semiconductor Quantum Materials Group, Eidgenössische Technische Hochschule ETH Zürich, Switzerland and Quantum Center, ETH Zürich, Switzerland

  • *Contact author: amina.slribeiro@gmail.com
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Phys. Rev. Research 7, 033046 – Published 10 July, 2025

DOI: https://doi.org/10.1103/1fby-kgfj

Abstract

We observed magnetocapacitance oscillations in InAs/GaSb quantum wells separated by a 20nm AlSb middle barrier. By realizing independent ohmic contacts for electrons in InAs and holes in the GaSb layer, we found an out-of-plane oscillatory response in capacitance representing the density of states of this system. We were able to tune the charge carrier densities by applying a DC bias voltage, identifying the formation of beating signatures for forward bias. The coexistence of two distinguishable two-dimensional (2D) charge carrier systems of unequal densities was verified. By developing a theory to describe the magnetocapacitance response of the system, we were able to validate that we have an electron-hole bilayer system. The Landau phase diagram presents distinct features originating from the bilayer channel with the additional presence of a 2D electron system at the surface of the InAs layer.

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Phys. Rev. Research 7, 033046– Published 10 July, 2025
  • Received 17 April 2024
  • Accepted 10 June 2025
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