Articles Citing

Complete magnetization compensation in the intrinsic ferromagnetic semiconductor ${Gd}_{x} {Sm}_{1 - x} N$

¹Paihau-Robinson Research Institute, Victoria University of Wellington, P.O. Box 33436, Petone 5046, New Zealand
²School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington 6140, New Zealand
³Université Côte d'Azur, CNRS-CRHEA, Valbonne 06560, France
⁴MacDiarmid Institute for Advanced Materials and Nanotechnology, P.O. Box 600, Wellington 6140, New Zealand

V. Rivera-Chambost, M. Markwitz, J. Stevens, F. Natali, T. Butler, and W. F. Holmes-Hewett

Phys. Rev. Materials 10 026201 (2026)

K. Van Koughnet, E. Joshy, W. F. Holmes-Hewett, N. Kawamura, M. Suzuki, H. J. Trodahl, J. D. Miller, and B. J. Ruck

Phys. Rev. B 114 144415 (2026)

K. Van Koughnet, W. F. Holmes-Hewett, and B. J. Ruck

Journal of Applied Physics 138 065102 (2025)

W F Holmes-Hewett, J D Miller, H G Ahmad, S Granville, and B J Ruck

J. Phys. D: Appl. Phys. 58 343001 (2025)

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