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Importance of finite-size corrections for accurate ab initio modeling of carrier capture at semiconductor defects: A case study of substitutional CN in GaN

S. R. Lee*, N. A. Modine†, and W. R. Wampler

  • *Contact author: srlee@sandia.gov
  • †Contact author: namodin@sandia.gov

Point-defect kinetics in semiconductors: Experimental insights, modeling approaches, and applications

Leopoldo Diaz, Peter A. Schultz, Arthur H. Edwards, Daniel M. Fleetwood, Harold P. Hjalmarson, Kai Nordlund, Ronald D. Schrimpf, Edmund G. Seebauer, William R. Wampler, and William J. Weber

MRS Bulletin 51 572 (2026)

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