- Open Access
High-throughput magnetic co-doping and design of exchange interactions in topological insulators
Phys. Rev. Materials 8, 104201 – Published 17 October, 2024
DOI: https://doi.org/10.1103/PhysRevMaterials.8.104201
Abstract
Using high-throughput automation of ab initio impurity embedding simulations, we create a database of and transition metal defects embedded into the prototypical topological insulators (TIs) and . We simulate both single impurities as well as impurity dimers at different impurity-impurity distances inside the topological insulator matrix. We extract changes to magnetic moments, analyze the polarizability of nonmagnetic impurity atoms via nearby magnetic impurity atoms and calculate the exchange coupling constants for a Heisenberg Hamiltonian. We uncover chemical trends in the exchange coupling constants and discuss the impurities' abilities with respect to magnetic order in the fields of quantum anomalous Hall insulators and topological quantum computing. In particular, we confirm that co-doping of different magnetic dopants is a viable strategy to engineer the magnetic ground state in magnetic TIs.
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