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    Quantum anomalous Hall and valley quantum anomalous Hall effects in two-dimensional d0 orbital XY monolayers

    Kang Wang1, Yihui Li1, Haoliang Mei1, Ping Li1,2,3,*, and Zhi-Xin Guo1,2,†

    • 1State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum System, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China
    • 2Key Laboratory for Computational Physical Sciences (Ministry of Eduction), Fudan University, Shanghai 200433, China
    • 3State Key Laboratory for Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China

    • *pli@xjtu.edu.cn
    • †zxguo08@xjtu.edu.cn

    Phys. Rev. Materials 6, 044202 – Published 26 April, 2022

    DOI: https://doi.org/10.1103/PhysRevMaterials.6.044202

    Abstract

    We propose a new family of the d0 orbital XY (X = K, Rb, Cs; Y = N, P, As, Sb, Bi) monolayers with abundant and novel topology and valley properties. The KN, RbN, RbP, RbAs, CsP, CsAs, and CsSb monolayers possess remarkable quantum anomalous Hall effect (QAHE). The CsSb monolayer also exhibits extraordinary valley QAHE with giant splitting. Moreover, the topological properties of XY monolayers can be efficiently tuned by the in-plane strain, owing to the strain-induced band inversion between the px,y and pz orbitals. Our findings suggest that the d0 orbital XY monolayers can be good candidates for promising applications in the spintronics and multifunctional topological-based devices.

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