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    Engineering topology by design in two-dimensional materials

    Arjyama Bordoloi1 and Sobhit Singh1,2,*

    • *Contact author: s.singh@rochester.edu

    Phys. Rev. Materials 10, 100302 – Published 29 October, 2026

    DOI: https://doi.org/10.1103/yx43-b5mm

    Abstract

    Two-dimensional topological insulators (2D TIs) have emerged as a cornerstone of next-generation spintronic technologies because of their robust, dissipationless edge states protected by time-reversal symmetry. Initial realizations of 2D TIs have primarily focused on materials with strong intrinsic spin–orbit coupling capable of driving band inversion, an approach that significantly constrains the accessible materials landscape. More recently, a paradigm shift has occurred toward engineering topological phases in van der Waals (vdW) heterostructures, where nontrivial band topology can arise from interfacial coupling rather than relying solely on intrinsic material properties. This framework provides an exceptionally versatile platform with multiple tunable degrees of freedom, including stacking configuration, twist angle, and chemical functionalization, allowing systematic manipulation of the band topology. Furthermore, external stimuli, such as electric fields, strain, and light–matter coupling, enable dynamic and reversible control of the topological character. The combined use of vdW interface engineering and external modulation allows the realization of 2D TI phases even in otherwise topologically trivial systems, substantially expanding the accessible materials landscape. This Research Update reviews key milestones in the development of vdW-engineered 2D topological quantum materials, critically assesses outstanding theoretical and experimental challenges, and outlines promising directions for future breakthroughs.

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