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    Gate-tunable large second-order and third-order nonlinear Hall effect in topological insulator BiSbTeSe2

    Fengyi Guo1, Shuai Zhang1,2,3,*, Xiubing Li1, Zheng Dai1, Congcong Li1, Yufan Ju1, Ziqi Wang1, Cheng Bin1,4, Zhe Ying3 et al.

    Fengqi Song1,2,3,†

    • 1National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Physical Science Research Center, and School of Physics, Nanjing University, Nanjing 210093, China
    • 2Institute of Atom Manufacturing, Nanjing University, Nanjing 211800, China
    • 3Jiangsu Provincial Key Laboratory of Atomic Level Manufacturing, Nanjing Institute of Atomic Scale Manufacturing, Nanjing 211800, China
    • 4School of Physics and Electronic Information, Jiangsu Second Normal University, Nanjing 211200, China

    • *Contact author: szhang@nju.edu.cn
    • †Contact author: songfengqi@nju.edu.cn
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    Phys. Rev. Materials 10, 104202 – Published 8 October, 2026

    DOI: https://doi.org/10.1103/y55k-pvgq

    Abstract

    The nonlinear Hall effect (NLHE) holds significant promise for next-generation electronic device applications, and it is essential to explore and engineer a strong and highly tunable NLHE. In this work, we report large second-order and third-order NLHEs in dual-gated BiSbTeSe2 devices. Both the second-order and third-order NLHE are highly gate tunable. The second-order NLHE exhibits a higher generation efficiency than those reported in previous topological insulator systems, and it can be stably observed up to room temperature. Meanwhile, the generation efficiency of the third-order NLHE is comparable to previously reported values. The scaling analysis indicates that the second-order NLHE is consistent with contributions from skew scattering and a term compatible with either the Berry curvature dipole or side jump, whereas the third-order NLHE is consistent with contributions from the Berry-connection polarizability tensor and higher-order skew scattering. Our work establishes a promising experimental platform for the development of NLHE-based devices.

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    Phys. Rev. Materials 10, 104202– Published 8 October, 2026
    • Received 9 May 2026
    • Accepted 24 September 2026
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