$\mathrm{Co}{\mathrm{V}}_2{\mathrm{O}}_4$ (CVO) stands out among spinel vanadates for its ultrashort V–V distances, placing it at the brink of itinerant electron behavior—an ideal playground for strain engineering. In this work, we exploit this sensitivity by growing high-quality epitaxial CVO thin films on ${\mathrm{SrTiO}}_3$ (001) and MgO (001), inducing compressive and tensile strain, respectively. Using pulsed laser deposition under ultralow oxygen pressure, we achieve high crystalline quality and strain-controlled tetragonal distortions: $c>a$ under compression (STO) and $c<a$ under tension (MgO). Resonant elastic x-ray scattering confirms a normal spinel structure, with cobalt occupying tetrahedral sites and vanadium octahedral ones. Both strain types reduce charge transport, driving the system into a highly resistive state. Magnetic measurements reveal strain-driven anisotropy switching: STO films transition from out-of-plane to in-plane easy axis below 90 K, while MgO films flip from in-plane to out-of-plane below 45 K. These results highlight CVO's exceptional responsiveness to lattice strain, unlocking a path to finely tunable electronic and magnetic properties. With its strong spin-lattice coupling and potential in spin Hall magnetoresistance, strained CVO emerges as a compelling platform for next-generation low-power spintronic devices.

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• Growth
• Magnetic anisotropy
• Magnetic phase transitions
• Structural properties
• Complex oxides
• Ferrimagnets
• Magnetic thin films
• Spinels
• Laser ablation
• Magnetization measurements
• Resistivity measurements
• X-ray diffraction