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Epitaxial growth and transport properties of a metallic altermagnet CrSb on a GaAs (001) substrate

Seiji Aota1 and Masaaki Tanaka1,2,3,*

  • 1Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113–8656, Japan
  • 2Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113–8656, Japan
  • 3Institute for Nano Quantum Information Electronics, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-0041, Japan

  • *Contact author: masaaki@ee.t.u-tokyo.ac.jp
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Phys. Rev. Materials 9, 074410 – Published 23 July, 2025

DOI: https://doi.org/10.1103/xjrx-wbv6

Abstract

A newly identified class of magnetic materials called altermagnets has attracted much attention due to the practical properties of spin-splitting bands akin to ferromagnets and small compensated magnetization akin to antiferromagnets. These features make them promising candidates for applications in spintronics devices. Among candidate materials, CrSb is promising because of its high ordering temperature (∼705 K) and large spin-splitting energy; however, it is predicted that tuning the Néel vector requires additional symmetry breaking or a change in the easy magnetization axis. While applying epitaxial strain can modulate the symmetry, the selection of substrates with closely matched lattice constants for heteroepitaxial growth is limited for altermagnets, which generally have low crystal symmetry. Therefore, exploring the heteroepitaxial growth of altermagnet thin films on well-established but dissimilar crystal systems is valuable. (001)-oriented III-V semiconductors, which share group-V elements with the overgrown CrSb, offer an ideal platform because they are expected to have material compatibility with stable interfaces, as well as tunability of the buffer layer's band gap and lattice constant by varying the atomic composition of their group-III and group-V atoms. In this study, we have achieved the molecular beam epitaxial growth of a single-crystalline CrSb (1¯10) thin film on a GaAs (001) substrate by inserting thin FeSb (1¯10) / AlAs (001) buffer layers. The in-plane epitaxial relationship is found to be CrSb [110] || GaAs [110] and CrSb [001] || GaAs [11¯0], and epitaxial strain is also confirmed. We also characterized the magnetotransport properties of the grown CrSb thin film. Although the obtained conductivity tensors are mainly explained by a two-carrier model, and not by an anomalous Hall effect, this model reveals the presence of high-mobility electron and hole carriers.

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Phys. Rev. Materials 9, 074410– Published 23 July, 2025
  • Received 12 February 2025
  • Accepted 25 June 2025
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Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

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