We report on the structural characterization and physical properties of ${\mathrm{Eu}}_2{\mathrm{InTe}}_5$, a distorted square-net motif antiferromagnetic semiconductor. Single crystal x-ray diffraction measurements reveal a distortion of the Te square-net layers such that an orthorhombic supercell is necessary to accurately describe the structure. Magnetization, resistivity, and specific heat measurements confirm antiferromagnetic ordering at $T_N=7.3\mathrm{K}$. Anisotropy in magnetization data suggests the magnetic moments are oriented parallel to the $c$ axis. We observe an unconventional transverse magnetoresistance and Hall resistivity in the paramagnetic state ($T\le 80\mathrm{K}$), indicating strong coupling between localized ${\mathrm{Eu}}^{2+}$ magnetic moments and conduction electrons. Resistivity and Hall measurements indicate the material is a heavily doped semiconductor, with impurity states related to disorder. Our findings highlight a relatively unexplored Eu-based antiferromagnetic semiconductor with unconventional magnetotransport behavior.

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• Hall effect
• Magnetotransport
• Antiferromagnets
• Magnetic semiconductors
• X-ray diffraction