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Analysis of phonon decay processes in corundum structured α−In2O3 and α−Al2O3 by temperature dependent Raman spectroscopy

Elias Kluth*,†, Josephin E. Müller*, and Rüdiger Goldhahn

Akito Taguchi and Tomohiro Yamaguchi

Martin Feneberg

  • Department of Applied Physics, School of Advanced Engineering, Kogakuin University, 2665-1 Nakano, Hachioji, Tokyo 192-0015, Japan

  • *These authors contributed equally to this work.
  • †Contact author: elias.kluth@ovgu.de
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Phys. Rev. Materials 10, 074603 – Published 31 July, 2026

DOI: https://doi.org/10.1103/vxv3-wrh3

Abstract

Temperature dependent Raman spectroscopy was employed on α−In2O3 and α−Al2O3 to determine the phonon decay factors associated with the decay of phonons into two and three phonons. Differently oriented corundum structured α−In2O3 and α−Al2O3 samples were analyzed by temperature dependent Raman spectroscopy between 80 and 300 K. The shift of the resonance frequency of the Raman active phonon modes A1g(1), Eg(4), and Eg(5) was investigated by a model function including the thermal expansion of the lattice and the decay of the phonons into two and three phonons with lower energy. We obtain the phonon decay factors A and B representing the decay into two and three phonons, respectively. The findings are in reasonable agreement with the existing literature on α−Al2O3, α−Ga2O3, and α−In2O3.

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Phys. Rev. Materials 10, 074603– Published 31 July, 2026
  • Received 11 March 2026
  • Accepted 16 June 2026
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