Direct orientation contrast imaging of antiphase domains on III-V materials using scanning electron microscopy
Phys. Rev. Materials 10, 073804 – Published 20 July, 2026
DOI: https://doi.org/10.1103/vl71-8m3d
Abstract
Direct orientation contrast imaging of zinc-blende III-V materials is studied using scanning electron microscopy. A quantitative approach is taken using a 3 µm thick orientation-patterned GaP grown on a GaAs sample, studying the antiphase domain contrast with respect to the electron beam energy and the tilt angle. A qualitative approach is taken for III-V grown on nonpolar materials with and without chemical mechanical polishing. Finally, a processing of the acquired image for GaP on Si reveals in-plane preferential antiphase boundaries.
