Effects of isovalent substitution on the structure and properties of : Ising-to-Heisenberg crossover
Phys. Rev. Materials 9, 084405 – Published 8 August, 2025
DOI: https://doi.org/10.1103/tmyr-5t19
Abstract
The polycrystalline layered compounds have been synthesized using the solid-state reaction method and characterized by means of x-ray diffraction, magnetization, electrical resistivity, and magnetoresistance measurements. The iron-chalcogen bonds in are found to be noticeably longer than the titanium-chalcogen bonds, and the bond lengths increase when sulfur is replaced by selenium, although the axial ratio remains unchanged. Although all compounds exhibit antiferromagnetic (AFM) order below , increasing the selenium content in changes the magnetization behavior from Ising type in selenium-poor compounds () to Heisenberg type at . In compounds with mixed anionic layers, the AFM order presumably coexists with the cluster glass state. At low concentrations of selenium (), the compounds exhibit irreversible field-induced phase transitions to a metastable ferromagnetic (FM) state, which are accompanied by significant remnant magnetoresistance. Reversal of magnetization in the FM state is accompanied by a large hysteresis (up to kOe at 2 K). In the compound () with Néel temperature K, an anomalous electrical resistivity behavior was detected in the vicinity of 110 K, which is associated with a charge-density-wave-type transition, similar to that observed in nonintercalated .