Imaging silver-nanoparticle-decoration-boosted charge separation and transport in InP by scanning ultrafast electron microscopy
Phys. Rev. Materials 10, 024606 – Published 17 February, 2026
DOI: https://doi.org/10.1103/tbhp-ml3m
Abstract
Indium phosphide (InP), a promising III-V semiconductor material, demonstrates exceptional photocatalytic potential due to its moderate bandgap and high exciton mobility. Despite its advantages, enhancing the photocatalytic efficiency of InP remains a challenge, primarily due to the rapid carrier recombination and insufficient charge transport. Here, we investigate the effects of silver nanoparticle (Ag NPs) decoration on InP's carrier dynamics using scanning ultrafast electron microscopy (SUEM), which enables the observation of charge separation, diffusion, and recombination at femtosecond and nanometer scales. The SUEM imaging results show that Ag NPs can substantially enhance light absorption and carrier excitation through localized surface plasmon resonance (LSPR) effects, significantly improving charge separation and reducing recombination. Crucially, the presence of Ag NPs significantly accelerates the charge diffusion, allowing carriers to persist longer and diffuse faster compared to InP. Furthermore, the introduction of Ag films, which form a Schottky barrier at the metal-semiconductor interface, was shown to improve charge separation but exhibited limited diffusion due to the absence of the LSPR effect and the existence of more interface states. This work provides new insights into how metal NP decoration modulates carrier dynamics in semiconductors, which are pivotal for advancing the design of photocatalytic materials and optoelectronic devices.
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New Insights into Functional Materials through Advanced Electron Microscopy
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