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    Electronic and magnetic properties of hole-doped topological kagome Fe1−xMnxSn thin films

    Rajesh Dutta1,*, Prajwal M. Laxmeesha1, Tarush Tandon1, Tessa D. Tucker1, Sharup Sheikh2, Uditha M. Jayathilake2, Wei Tian3, Adam A. Aczel3, Tien-Lin Lee4 et al.

    Alexander X. Gray2 and Steven J. May1,†

    • *Contact author: rd852@drexel.edu
    • †Contact author: smay@drexel.edu

    Phys. Rev. Materials 9, 074201 – Published 8 July, 2025

    DOI: https://doi.org/10.1103/st9s-hsyr

    Abstract

    We have investigated the electronic and magnetic structures of topological kagome Fe1−xMnxSn (0≤x≤0.3) thin films via neutron diffraction, electronic transport measurements, and ab initio density functional theory (DFT) to understand the interplay between hole doping, magnetism, and the electronic structures. Temperature-dependent neutron diffraction measurements on parent FeSn reveal the Néel temperature to be TN∼355  K and the underlying A-type antiferromagnetic ordering is associated with a wave vector q=(001/2). Upon Mn doping to x=0.15, TN decreases slightly while the magnetic ordering vector remains the same. Resistivity measurements show metallic characteristics and in-plane anisotropy down to 10 K for all the investigated samples. The effects of hole doping are mapped in terms of electronic ground state calculations via DFT which show that the Dirac point is moved closer to the Fermi level (EF) and the flat bands get pushed away from EF upon hole doping. However, a comparison between hole-doped Fe1−xMnxSn and electron-doped Fe1−xCoxSn indicates that the Néel temperature does not scale with the position of EF relative to the flat band. Our results establish the antiferromagnetic state of FeSn and Fe1−xMnxSn films at room temperature, laying the groundwork for future studies of magnetism in kagome heterostructures.

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