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    Strain induced magnetic order and magnetic anisotropy transitions in epitaxial SrMn0.3Ir0.7O3 films

    Shengkai Liu1, Yuqi Wang1, Pengxiang Hou1,2, Yang Wu1, Jibo Xu1, Yajie Han1,3, Yu Deng1, and Di Wu1,*

    • 1National Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, Jiangsu Key Laboratory of Artificial Functional Materials, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
    • 2Beijing Institute of Smart Energy, Beijing 102209, China
    • 3School of Materials Science and Engineering, Liaocheng University, Liaocheng 252059, China

    • *Contact author: diwu@nju.edu.cn

    Phys. Rev. Materials 10, 104414 – Published 19 October, 2026

    DOI: https://doi.org/10.1103/sffm-3s75

    Abstract

    Epitaxial strain may break the orbital degeneracy, favoring a particular orbital filling. This may influence the magnetic properties of transition metal oxides. Herein, we report the consecutive magnetic order and magnetic anisotropy transitions in SrMn0.3Ir0.7O3 (SMIO) thin films, with both 3d and 5d elements on perovskite B sites, as a function of the epitaxial strain. The SMIO films have been epitaxially deposited by pulsed laser deposition on (001)-oriented (LaAlO3)0.3−(Sr2AlTaO6)0.7 substrates buffered with BaTiO3 (BTO) of varying thicknesses. The lattice of the BTO buffer layer relaxes as its thickness increases from 2 to 25 unit cells. Accordingly, the SMIO films deposited epitaxially on top of the BTO buffer layer are subject to a varying strain from compressive to tensile as the BTO thickness increases, driving the SMIO films from antiferromagnetic to ferromagnetic, and then back to antiferromagnetic, accompanied by a change from perpendicular to in-plane magnetic anisotropy. X-ray linear dichroism spectra reveal that the magnetic order and anisotropy in SMIO are associated with the preferential occupation of the Mn d3z2−r2 or dx2−y2 orbitals, which is controlled, in turn, by the epitaxial strain.

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