Deep level defects in silicon carbide (SiC) are of great importance for developing both power electronics and quantum technology applications based on SiC material. While the more technologically mature $4H$ polytype has been widely explored, electrical identification of deep level defect states in $6H$-SiC has not been completed. This work aims to identify irradiation-induced charge state transition levels arising from intrinsic defects in $6H$-SiC using deep level transient spectroscopy (DLTS) and the formation energy diagram formalism based on density functional theory (DFT) calculations. By comparing experimental results of $6H$-SiC epitaxial layers with measurements of $4H$-SiC material that has been grown under identical conditions, combined with DFT calculations, we assign possible origins for the observed DLTS-signatures.

Close

PrevNext

View figure in article

• Capacitance
• Charge dynamics
• Defects
• Electron emission
• Thermionic emission
• Deep level transient spectroscopy
• Density functional theory