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Interface magnetism and anomalous Hall effect in bilayers
Phys. Rev. Materials 9, 124402 – Published 4 December, 2025
DOI: https://doi.org/10.1103/qxn3-5327
Abstract
Epitaxial interfaces combining 3d and 5d transition metal oxides are a fertile playground to examine the interplay between topology and electron correlations. In this paper, we explore magnetism and transport of bilayers combining ferromagnetic and the strong spin-orbit coupling material . We have found an interfacial magnetic proximity effect driving an intrinsic contribution to the anomalous Hall effect of topological origin. The interfacial proximity interaction is enabled by the Mn-O-Ir bonding reconstruction and depends on layer sequence. While bilayers with the on top featuring a robust Mn magnetism at the interface show the intrinsic AHE contribution, it is absent in bilayers with the inverted layer sequence ( layer on top) showing strongly suppressed magnetism at the interface. These results illustrate the leading role of interfacial atomic reconstructions on the interplay between topology and correlations at 3d/5d oxide interfaces. This finding may be of interest in future oxide topological spintronics and spin-orbitronics.
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Magnetic Phenomena at Oxide Interfaces: Fundamentals to Devices
The Editors of Physical Review Materials are pleased to present the Collection on Magnetic Phenomena at Oxide Interfaces, highlighting cutting-edge advances in oxide interface magnetism and its applications. The Collection is being guest-edited by Lucas Caretta from Brown University (USA) and Jacobo Santamaria from Universidad Complutense de Madrid (Spain). Every article published in this collection underwent a rigorous peer review process, adhering to the same high standards applied to all papers. The Physical Review Materials editorial team managed the peer review and made all editorial decisions.
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