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    First-principles investigation of gas molecule adsorption on pristine and defective 2H-TiBr2 monolayers

    André L. de O. Batista1,2, João Marcos T. Palheta3, Emanuel J. A. Santos1,2, Carlos Maciel O. Bastos1,4,2, Teldo Anderson da Silva Pereira5, Diego Guedes-Sobrinho6, Celso R. C. Rêgo7, Luiz A. Ribeiro Júnior8,2, Maurício J. Piotrowski3,* et al.

    Alexandre C. Dias1,4,2

    • *Contact author: mauriciomjp@gmail.com

    Phys. Rev. Materials 10, 104003 – Published 6 October, 2026

    DOI: https://doi.org/10.1103/qt6p-b5jj

    Abstract

    Recently, transition metal dihalides have emerged as a promising class of two-dimensional materials with unique electronic and optoelectronic properties, although their defect-mediated surface chemistry remains largely unexplored. Herein, we employed density functional theory calculations to investigate the adsorption of gas molecules (CO, CO2, H2, H2O, N2, and O2) on pristine and defective 2H-TiBr2 monolayers containing a Br monovacancy. The pristine substrate exhibits weak physisorption dominated by van der Waals interactions, preserving both the intrinsic semiconducting character and the electronic structure of the monolayer. In contrast, the introduction of a Br vacancy substantially enhances the local surface reactivity by exposing undercoordinated Ti atoms that act as active adsorption centers. While CO, CO2, and H2 remain weakly adsorbed even in the presence of the vacancy, H2O exhibits a stronger molecular adsorption without bond dissociation, whereas N2 and O2 undergo strong chemisorption at the defect site. Combined Bader, PDOS, charge-density-difference, and structural analyses support a defect-mediated charge-transfer mechanism in which electrons are transferred from localized Ti d states toward low-lying molecular π* antibonding orbitals, weakening the intramolecular bonds and leading to significant N–N bond elongation and dissociative adsorption of O2. The vacancy-induced functionalization also modifies the electronic structure by introducing localized midgap states, qualitatively reducing the PBE band gap, and stabilizing a magnetic moment of 1.00μB. Our results show that defect engineering is a promising strategy to tune the reactivity and electronic properties of TiBr2 monolayers, providing an atomistic foundation for future studies on gas sensing and heterogeneous catalysis.

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