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    Doping-induced spin reorientation in kagome magnet TmMn6Sn6

    Mohamed El Gazzah1,2,*, Po-Hao Chang3, Y. Lee4, Hari Bhandari1,2,5, Resham Regmi1,2, Xiuquan Zhou6, Liqin Ke4,7, Igor I. Mazin3,8, and Nirmal J. Ghimire1,2

    • *Contact author: melgazza@nd.edu

    Phys. Rev. Materials 9, 114414 – Published 19 November, 2025

    DOI: https://doi.org/10.1103/qbwt-qdt7

    Abstract

    The kagome-lattice compounds RMn6Sn6 (R is a rare-earth element), where the Mn atoms form a kagome net in the basal plane, are currently attracting a great deal of attention as they have been shown to host complex magnetic textures and electronic topological states strongly sensitive to the choice of the R atom. Among the magnetic R atoms, TmMn6Sn6 orders with the easy-plane magnetization forming a complex magnetic spiral along the c axis. Previous neutron studies carried out on polycrystalline samples found that Ga doping changes the magnetic anisotropy from easy-plane to easy-axis. Here we present magnetic and magnetotransport measurements on a single crystal and first-principles calculations in the doping series of TmMn6Sn6−xGax. We find that the magnetic properties are highly sensitive even to a small concentration of Ga. With minimal Ga substitution, the easy-plane anisotropy is maintained, which gradually changes to the easy-axis anisotropy with increasing Ga. We discuss these observations with respect to the effect of Ga doping on magnetocrystalline anisotropy and Tm crystal field.

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