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Gate-tunable ferromagnetism in Cr2Si2Te6 thin flakes

Changhong Yuan1,2,*, Yutong Wang1,2,*, Xu Yan1,3,*, Kunya Yang4, Wenxin Cheng1,2, Yating Jiang1,2, Qiuyan Shi1,2, Xingyu Jiang1, Xuewei Wang1,2 et al.

Zhiyu Huang1,2, Yuhan Jin1,2, Beiyi Zhu1,2, Jie Yuan1,2, Mingquan He5,†, Quansheng Wu1,2,‡, and Qihong Chen1,2,§

  • *These authors contributed equally to this work.
  • †Contact author: mingquan.he@cqu.edu.cn
  • ‡Contact author: quansheng.wu@iphy.ac.cn
  • §Contact author: qihongchen@iphy.ac.cn

Phys. Rev. Materials 10, L041401 – Published 9 April, 2026

DOI: https://doi.org/10.1103/nlt7-52tc

Abstract

While intrinsic two-dimensional (2D) ferromagnetic (FM) materials hold great promise for spintronic applications, external control over both electrical and magnetic properties is crucial. Here, we demonstrate effective modulation of electronic and magnetic characteristics of Cr2Si2Te6 (CST) through ionic liquid gating (ILG). Upon electron doping via ILG, CST undergoes a semiconductor-to-metal transition, accompanied by remarkable enhancements in Curie temperature (Tc, from 33 K to 110 K) and coercive field (Hc, from 1.4 mT to 50 mT). Moreover, under high doping levels, the magnetic easy axis can be electrically switched from the out-of-plane to the in-plane direction. Theoretical calculations suggest a possible scenario in which electron doping strengthens FM coupling through a double-exchange mechanism between mixed-valence Cr ions, thereby boosting Tc. These findings highlight ILG as a versatile strategy for tailoring magnetism in 2D ferromagnets and offering pathways for next-generation spintronic devices.

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