- Open Access
Chemical-state evolution and phase stability of epitaxial thin films probed by XPS, HAXPES, and in situ XRD
Phys. Rev. Materials 10, 105003 – Published 19 October, 2026
DOI: https://doi.org/10.1103/n9ds-9x2h
Abstract
Epitaxial thin films were grown on substrates by physical vapor deposition under back-end-of-line compatible conditions, followed by postdeposition annealing to induce crystallization. While annealing-driven structural evolution in delafossite oxides has been reported, the corresponding chemical-state evolution across crystallization and decomposition boundaries remains insufficiently understood. Here, x-ray photoelectron spectroscopy, hard x-ray photoelectron spectroscopy (HAXPES), and in situ x-ray diffraction are combined to track chemical states and phase stability in thin films as a function of thermal processing. This multimodal approach resolves the spectroscopic fingerprints of the metallic delafossite phase, unambiguously identifying formal and valence states. Bulk-sensitive HAXPES, reported here for , mitigates surface artifacts and enables direct correlation between bulk chemistry and structural order. Annealing at yields phase-pure, epitaxial , whereas higher temperatures induce decomposition into metallic Pt and cobalt oxide phases, defining a narrow thermal stability window. Highly crystalline films down to 4.5 nm thickness exhibit low in-plane resistivities consistent with the metallic delafossite phase. These results establish a chemically specific framework for assessing phase formation and stability in thin films and demonstrate the utility of combined photoelectron spectroscopy and in situ diffraction for complex oxide metals.
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