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Chemical-state evolution and phase stability of epitaxial PtCoO2 thin films probed by XPS, HAXPES, and in situ XRD

Kerry Hazeldine1,*, Jean-Philippe Soulié1, Robin Petit2, Christophe Detavernier2, Silvia Armini1, and Christoph Adelmann1

  • 1Imec, Kapeldreef 75, 3001 Leuven, Belgium
  • 2Department of Solid State Sciences, Krijgslaan 281-S1, Ghent University, 9000 Gent, Belgium

  • *Contact author: Kerry.hazeldine@imec.be

Phys. Rev. Materials 10, 105003 – Published 19 October, 2026

DOI: https://doi.org/10.1103/n9ds-9x2h

Abstract

Epitaxial PtCoO2 thin films were grown on Al2O3(0001) substrates by physical vapor deposition under back-end-of-line compatible conditions, followed by postdeposition annealing to induce crystallization. While annealing-driven structural evolution in delafossite oxides has been reported, the corresponding chemical-state evolution across crystallization and decomposition boundaries remains insufficiently understood. Here, x-ray photoelectron spectroscopy, hard x-ray photoelectron spectroscopy (HAXPES), and in situ x-ray diffraction are combined to track chemical states and phase stability in PtCoO2 thin films as a function of thermal processing. This multimodal approach resolves the spectroscopic fingerprints of the metallic delafossite phase, unambiguously identifying formal Pt1+ and Co3+ valence states. Bulk-sensitive HAXPES, reported here for PtCoO2, mitigates surface artifacts and enables direct correlation between bulk chemistry and structural order. Annealing at 800∘C yields phase-pure, epitaxial PtCoO2, whereas higher temperatures induce decomposition into metallic Pt and cobalt oxide phases, defining a narrow thermal stability window. Highly crystalline films down to 4.5 nm thickness exhibit low in-plane resistivities consistent with the metallic delafossite phase. These results establish a chemically specific framework for assessing phase formation and stability in PtCoO2 thin films and demonstrate the utility of combined photoelectron spectroscopy and in situ diffraction for complex oxide metals.

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References (58)

  1. J. Torres, Advanced copper interconnections for silicon CMOS technologies, Appl. Surf. Sci. 91, 112 (1995).
  2. C. Ryu, K.-W. Kwon, A. L. S. Loke, H. Lee, T. Nogami, V. M. Dubin, R. A. Kavari, G. W. Ray, and S. S. Wong, Microstructure and reliability of copper interconnects, IEEE Trans. Electron Devices 46, 1113 (1999).
  3. C.-K. Hu, B. Luther, F. B. Kaufman, J. Hummel, C. Uzoh, and D. J. Pearson, Copper interconnection integration and reliability, Thin Solid Films 262, 84 (1995).
  4. G. E. Moore, Cramming more components onto integrated circuits, Proc. IEEE 86, 82 (1998).
  5. R. R. Schaller, Moore's law: Past, present and future, IEEE Spectrosc. 34, 52 (1997).
  6. M. T. Bohr and I. A. Young, CMOS Scaling trends and beyond, IEEE Micro 37, 20 (2017).
  7. J.-P. Soulié et al., Selecting alternative metals for advanced interconnects, J. Appl. Phys. 136, 171101 (2024).
  8. G. Murdoch, Z. Tokei, S. Paolillo, O. V. Pedreira, K. Vanstreels, and C. J. Wilson, Semidamascene Interconnects for 2 nm Node and Beyond, in 2020 IEEE International Interconnect Technology Conference (IITC) (IEEE, New York, 2020), pp. 4–6.
  9. R. Brain, Interconnect scaling: Challenges and opportunities, in 2016 IEEE International Electron Devices Meeting (IEDM) (IEEE, New York, 2016), pp. 9.3.1–9.3.4.
  10. H.-W. Kim, Recent trends in copper metallization, Electronics (Basel). 11, 2914 (2022).
  11. I. Ciofi, A. Contino, P. J. Roussel, R. Baert, V.-H. Vega-Gonzalez, K. Croes, M. Badaroglu, C. J. Wilson, P. Raghavan, A. Mercha, D. Verkest, G. Groeseneken, D. Mocuta, and A. Thean, Impact of wire geometry on interconnect RC and circuit delay, IEEE Trans. Electron Devices 63, 2488 (2016).
  12. H. Ahn, H. Jeon, S. Lee, W. Hong, E. Jung, R. Kim, and T. Ha, Improvement of Ru-Co Liner for Void-Free Cu interconnect in extremely small pitch, in 2024 IEEE International Interconnect Technology Conference (IITC) (IEEE, New York, 2024), pp. 1–3.
  13. S. You, H. Ren, M. Naik, L. Chen, F. Chen, C. L. Cervantes, X. Xie, and K. Kashefizadeh, Selective Barrier for Cu Interconnect Extension in 3 nm Node and Beyond, in 2021 IEEE International Interconnect Technology Conference (IITC) (IEEE, New York, 2021), pp. 1–3.
  14. P. Kapur, G. Chandra, J. P. McVittie, and K. C. Saraswat, Technology and reliability constrained future copper interconnects. II. Performance implications, IEEE Trans. Electron Devices 49, 598 (2002).
  15. L. G. Wen, P. Roussel, O. V. Pedreira, B. Briggs, B. Groven, S. Dutta, M. I. Popovici, N. Heylen, I. Ciofi, K. Vanstreels, F. W. Østerberg, O. Hansen, D. H. Petersen, K. Opsomer, C. Detavernie, C. J. Wilson, S. V. Elshocht, K. Croes, J. Bömmels, Z. Tőkei, and C. Adelmann, Atomic layer deposition of ruthenium with TiN interface for sub-10 nm advanced interconnects beyond copper, ACS Appl. Mater. Interfaces 8, 26119 (2016).
  16. S. Dutta, S. Kundu, A. Gupta, G. Jamieson, J. F. Gomez Granados, J. Bommels, C. J. Wilson, Z. Tokei, and C. Adelmann, Highly scaled ruthenium interconnects, IEEE Electron Device Lett. 38, 949 (2017).
  17. J. Kim, H. Rhee, M. W. Son, J. Park, G. Kim, J. B. Jeon, H. Song, G. Kim, B.-G. Park, J. H. Han, and K. M. Kim, Electromigration reliability of barrierless ruthenium and molybdenum for sub-10 nm interconnection, ACS Appl. Electron. Mater. 5, 2447 (2023).
  18. V. Founta, J.-P. Soulié, K. Sankaran, K. Vanstreels, K. Opsomer, P. Morin, P. Lagrain, A. Franquet, D. Vanhaeren, T. Conard, J. Meersschaut, C. Detavernier, J. Van de Vondel, I. De Wolf, G. Pourtois, Z. Tőkei, J. Swerts, and C. Adelmann, Properties of ultrathin molybdenum films for interconnect applications, Materialia 24, 101511 (2022).
  19. I. Erofeev, A. W. Hartanto, M. M. Khan, K. Deng, K. Kumar, Z. Aabdin, W. W. Tjiu, M. Zhang, A. Pacco, H. Philipsen, A. R. Chowdhuri, H. V. Huynh, F. Holsteyns, and U. Mirsaidov, Digital etching of molybdenum interconnects using plasma oxidation, Adv. Mater. Interfaces 12, 2400558 (2025).
  20. L. G. Wen et al., Ruthenium metallization for advanced interconnects, in 2016 IEEE International Interconnect Technology Conference /Advanced Metallization Conference (IITC/AMC) (IEEE, New York, 2016), pp. 34–36.
  21. T. Harada, Thin-film growth and application prospects of metallic delafossites, Mater. Today Adv. 11, 100146 (2021).
  22. A. P. Mackenzie, The properties of ultrapure delafossite metals, Rep. Prog. Phys. 80, 032501 (2017).
  23. F. Arnold, M. Naumann, H. Rosner, N. Kikugawa, D. Graf, L. Balicas, T. Terashima, S. Uji, H. Takatsu, S. Khim, A. P. Mackenzie, and E. Hassinger, Fermi surface of PtCoO2 from quantum oscillations and electronic structure calculations, Phys. Rev. B 101, 195101 (2020).
  24. M. De Clercq, K. Moors, K. Sankaran, G. Pourtois, S. Dutta, C. Adelmann, W. Magnus, and B. Sorée, Resistivity scaling model for metals with conduction band anisotropy, Phys. Rev. Mater. 2, 033801 (2018).
  25. S. Kumar, C. Multunas, B. Defay, D. Gall, and R. Sundararaman, Ultralow electron-surface scattering in nanoscale metals leveraging Fermi-surface anisotropy, Phys. Rev. Mater. 6, 085002 (2022).
  26. C. W. Hicks, A. S. Gibbs, A. P. Mackenzie, H. Takatsu, Y. Maeno, and E. A. Yelland, Quantum oscillations and high carrier mobility in the delafossite PdCoO2, Phys. Rev. Lett. 109, 116401 (2012).
  27. P. Kushwaha, V. Sunko, P. J. W. Moll, L. Bawden, J. M. Riley, N. Nandi, H. Rosner, M. P. Schmidt, F. Arnold, E. Hassinger, T. K. Kim, M. Hoesch, A. P. Mackenzie, and P. D. C. King, Nearly free electrons in a 5d delafossite oxide metal, Sci. Adv. 1, e1500692 (2015).
  28. C. Adelmann et al., Layer transfer of epitaxial Ru by metal-metal bonding: Towards single-crystal interconnects, in 2026 IEEE 76th Electronic Components and Technology Conference (ECTC), Orlando, FL, USA (IEEE, New York, 2026), pp. 1425–1431.
  29. J.-P. Soulié, H.-Y. Lee, C. Merckling, J. Swerts, C. Wu, S. Park, Z. Tőkei, and C. Adelmann, Delafossite oxide PtCoO2 as new conductor for advanced interconnect metallization, in 2025 IEEE International Interconnect Technology Conference (IITC) (IEEE, New York, 2025), pp. 1–3.
  30. M. Brahlek, G. Rimal, J. M. Ok, D. Mukherjee, A. R. Mazza, Q. Lu, H. N. Lee, T. Z. Ward, R. R. Unocic, G. Eres, and S. Oh, Growth of metallic delafossite PdCoO2 by molecular beam epitaxy, Phys. Rev. Mater. 3, 093401 (2019).
  31. D. J. Hagen, J. Yoon, H. Zhang, B. Kalkofen, M. Silinskas, F. Börrnert, H. Han, and S. S. P. Parkin, Atomic layer deposition of the conductive delafossite PtCoO2, Adv. Mater. Interfaces 9, 2200013 (2022).
  32. Y. Li et al., PtCoO2 for Scaled Interconnects, Small Struct. 6, 2400638 (2025).
  33. G. Rampelberg, B. De Schutter, W. Devulder, K. Martens, I. Radu, and C. Detavernier, In situ x-ray diffraction study of the controlled oxidation and reduction in the V–O system for the synthesis of VO2 and V2O3 thin films, J. Mater. Chem. C 3, 11357 (2015).
  34. See Supplemental Material at http://link.aps.org/supplemental/10.1103/n9ds-9x2h for supporting XPS, HAXPES, AFM, and TEM data; elemental compositions; EDS mapping; and discussion of Pt chemical states in epitaxial PtCoO2 thin films.
  35. V. A. Saveleva, V. Papaefthimiou, M. K. Daletou, W. H. Doh, C. Ulhaq-Bouillet, M. Diebold, S. Zafeiratos, and E. R. Savinova, Operando near ambient pressure XPS (NAP-XPS) study of the Pt electrochemical oxidation in H2O and H2O/O2 ambients, J. Phys. Chem. C 120, 15930 (2016).
  36. M. C. Biesinger, B. P. Payne, A. P. Grosvenor, L. W. M. Lau, A. R. Gerson, and R. St. C. Smart, Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Cr, Mn, Fe, Co and Ni, Appl. Surf. Sci. 257, 2717 (2011).
  37. J. Yang, H. Liu, W. N. Martens, and R. L. Frost, Synthesis and characterization of cobalt hydroxide, cobalt oxyhydroxide, and cobalt oxide nanodiscs, J. Phys. Chem. C 114, 111 (2010).
  38. F.-C. Kong, Y.-F. Li, C. Shang, and Z.-P. Liu, Stability and phase transition of cobalt oxide phases by machine learning global potential energy surface, J. Phys. Chem. C 123, 17539 (2019).
  39. L. Lukashuk, N. Yigit, H. Li, J. Bernardi, K. Föttinger, and G. Rupprechter, Operando XAS and NAP-XPS investigation of CO oxidation on meso- and nanoscale CoO catalysts, Catal. Today 336, 139 (2019).
  40. M. Peuckert and H. P. Bonzel, Characterization of oxidized platinum surfaces by x-ray photoelectron spectroscopy, Surf. Sci. 145, 239 (1984).
  41. C. R. Parkinson, M. Walker, and C. F. McConville, Reaction of atomic oxygen with a Pt(111) surface: Chemical and structural determination using XPS, CAICISS and LEED, Surf. Sci. 545, 19 (2003).
  42. A. Sun, J. Franc, and D. D. Macdonald, Growth and properties of oxide films on platinum, J. Electrochem. Soc. 153, B260 (2006).
  43. H. Kuroki, M. Matsumoto, T. Tamaki, H. Imai, and T. Yamaguchi, Analysis of oxidized pt species on a connected Pt–Fe catalyst with enhanced oxygen reduction activity probed by electrochemical XPS, J. Chem. Eng. Jpn. 56, (2023).
  44. R. Vakili, E. K. Gibson, S. Chansai, S. Xu, N. Al‐Janabi, P. P. Wells, C. Hardacre, A. Walton, and X. Fan, Understanding the CO Oxidation on Pt nanoparticles supported on MOFs by Operando XPS, ChemCatChem 10, 4238 (2018).
  45. P. Petzoldt, M. Eder, S. Mackewicz, M. Blum, T. Kratky, S. Günther, M. Tschurl, U. Heiz, and B. A. J. Lechner, Tuning strong metal–support interaction kinetics on Pt-loaded TiO2 (110) by choosing the pressure: A combined ultrahigh vacuum/near-ambient pressure XPS study, J. Phys. Chem. C 126, 16127 (2022).
  46. N. S. McIntyre and M. G. Cook, X-ray photoelectron studies on some oxides and hydroxides of cobalt, nickel, and copper, Anal. Chem. 47, 2208 (1975).
  47. D. Barreca, A. Gasparotto, O. I. Lebedev, C. Maccato, A. Pozza, E. Tondello, S. Turner, and G. Van Tendeloo, Controlled vapor-phase synthesis of cobalt oxide nanomaterials with tuned composition and spatial organization, CrystEngComm 12, 2185 (2010).
  48. J. Fester, A. Walton, Z. Li, and J. V. Lauritsen, Gold-supported two-dimensional cobalt oxyhydroxide (CoOOH) and multilayer cobalt oxide islands, Phys. Chem. Chem. Phys. 19, 2425 (2017).
  49. L. Dahéron, H. Martinez, R. Dedryvère, I. Baraille, M. Ménétrier, C. Denage, C. Delmas, and D. Gonbeau, Surface properties of LiCoO2 investigated by XPS analyses and theoretical calculations, J. Phys. Chem. C 113, 5843 (2009).
  50. A. T. Appapillai, A. N. Mansour, J. Cho, and Y. Shao-Horn, Microstructure of LiCoO2 with and without “AlPO4” Nanoparticle coating:  Combined STEM and XPS studies, Chem. Mater. 19, 5748 (2007).
  51. L. Dahéron, R. Dedryvère, H. Martinez, M. Ménétrier, C. Denage, C. Delmas, and D. Gonbeau, Electron transfer mechanisms upon lithium deintercalation from LiCoO2 to CoO2 investigated by XPS, Chem. Mater. 20, 583 (2008).
  52. A. G. Shard, Detection limits in XPS for more than 6000 binary systems using Al and Mg Kα X‐rays, Surf. Interface Anal. 46, 175 (2014).
  53. W. Crookes, The volatility of metals of the platinum group, Proc. R. Soc. London Ser. A 86, 461 (1912).
  54. J. C. Chaston, Reactions of oxygen with the platinum metals, Platin. Met. Rev. 9, 51 (1965).
  55. A. C. Meng, K.-B. Low, A. C. Foucher, Y. Li, I. Petrovic, and E. A. Stach, Anomalous metal vaporization from Pt/Pd/Al2O3 under redox conditions, Nanoscale 13, 11427 (2021).
  56. C. B. Alcock, The gaseous oxides of the platinum metals, Platinum Met. Rev. 5, 134 (1961).
  57. Y. Abe, M. Kawamura, and K. Sasaki, Preparation of PtO and α−PtO2 thin films by reactive sputtering and their electrical properties, Jpn. J. Appl. Phys. 38, 2092 (1999).
  58. K. Hazeldine, Data for “Chemical-State and Structural Evolution of PtCoO2 Thin Films During Annealing Revealed by XPS, HAXPES, and In-Situ XRD”, Zenodo, 2026, https://doi.org/10.5281/zenodo.19554453.

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