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Localized trimers inducing metallic states in sub-monolayer thin Bi films on InSb(111)A

Rohit Yadav1,2,*, Sandra Benter1,2,3, and Rainer Timm1,2,†

  • *Contact author: rohit.yadav@sljus.lu.se
  • †Contact author: rainer.timm@sljus.lu.se

Phys. Rev. Materials 9, 064204 – Published 24 June, 2025

DOI: https://doi.org/10.1103/mp9b-hgz1

Abstract

Low-dimensional topological states have transformed our understanding of charge transportation through quantum materials. Many relevant observations have been connected to bismuth (Bi) containing materials or ultrathin Bi films. Here, we studied sub-monolayer amounts of Bi deposition on the In-terminated InSb(111)A surface using various complementary surface science techniques. Bi deposition at elevated sample temperature results in well-ordered (2×2) and (2√3×2√3)−R30∘ surface reconstructions. Scanning tunneling microscopy/spectroscopy (STM/S) data show an enhanced density of states at the interface of the two reconstructions and local Bi trimers over the (2×2) reconstructed surface. Bi-induced metallic surface states crossing the Fermi level are observed and attributed exclusively to the localized trimer states through STS and angle-resolved photoemission spectroscopy (ARPES) results. Furthermore, the ARPES spectra show band splitting at the Γ point and degenerate surface states at the M point, which is associated with Rashba splitting due to strong Bi-substrate interaction. Thus we interpret the Bi/InSb(111)A, exhibiting spin-split metallic surface states induced by localized Bi structures, as a promising candidate for exploring low-dimensional states and spin dynamics in future quantum materials.

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References (46)

  1. Y. Liu and R. E. Allen, Electronic structure of the semimetals Bi and Sb, Phys. Rev. B 52, 1566 (1995).
  2. A. Takayama, T. Sato, S. Souma, T. Oguchi, and T. Takahashi, One-dimensional edge states with giant spin splitting in a bismuth thin film, Phys. Rev. Lett. 114, 066402 (2015).
  3. I. K. Drozdov, A. Alexandradinata, S. Jeon, S. Nadj-Perge, H. Ji, R. J. Cava, B. A. Bernevig, and A. Yazdani, One-dimensional topological edge states of bismuth bilayers, Nat. Phys. 10, 664 (2014).
  4. Z. Liu, C. X. Liu, Y. S. Wu, W. H. Duan, F. Liu, and J. Wu, Stable nontrivial Z2 topology in ultrathin Bi (111) Films: A first-principles study, Phys. Rev. Lett. 107, 136805 (2011).
  5. Y. Ohtsubo, L. Perfetti, M. O. Goerbig, P. Le Fèvre, F. Bertran, and A. Taleb-Ibrahimi, Non-trivial surface-band dispersion on Bi(111), New J. Phys. 15, 033041 (2013).
  6. M. H. Berntsen, O. Götberg, and O. Tjernberg, Reinvestigation of the giant Rashba-split states on Bi-covered Si(111), Phys. Rev. B 97, 125148 (2018).
  7. T. Hirahara, T. Nagao, I. Matsuda, G. Bihlmayer, E. V. Chulkov, Y. M. Koroteev, P. M. Echenique, M. Saito, and S. Hasegawa, Role of spin-orbit coupling and hybridization effects in the electronic structure of ultrathin Bi films, Phys. Rev. Lett. 97, 146803 (2006).
  8. F. Reis, G. Li, L. Dudy, M. Bauernfeind, S. Glass, W. Hanke, R. Thomale, J. Schäfer, and R. Claessen, Bismuthene on a SiC substrate: A candidate for a high-temperature quantum spin Hall material, Science 357, 287 (2017).
  9. S. Sun, J.-Y. You, S. Duan, J. Gou, Y. Z. Luo, W. Lin, X. Lian, T. Jin, J. Liu, Y. Huang, Y. Wang, A. T. S. Wee, Y. P. Feng, L. Shen, J. L. Zhang, J. Chen, and W. Chen, Epitaxial growth of ultraflat bismuthene with large topological band inversion enabled by substrate-orbital-filtering effect, ACS Nano 16, 1436 (2022).
  10. M. Zhou, W. Ming, Z. Liu, Z. Wang, P. Li, and F. Liu, Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface, Proc. Natl. Acad. Sci. USA 111, 14378 (2014).
  11. Y. Liu, S. Benter, C. S. Ong, R. P. Maciel, L. Björk, A. Irish, O. Eriksson, A. Mikkelsen, and R. Timm, A 2D bismuth-induced honeycomb surface structure on GaAs(111), ACS Nano 17, 5058 (2022).
  12. M. Gmitra and J. Fabian, First-principles studies of orbital and spin-orbit properties of GaAs, GaSb, InAs, and InSb zinc-blende and wurtzite semiconductors, Phys. Rev. B 94, 165202 (2016).
  13. H. S. Inbar, M. Zubair, J. T. Dong, A. N. Engel, C. P. Dempsey, Y. H. Chang, S. Nishihaya, S. Khalid, A. V. Fedorov, A. Janotti, and C. J. Palmstrøm, Structural inversion asymmetry in epitaxial ultrathin films of Bi(111)/InSb(111)B, Phys. Rev. Mater. 9, 054202 (2025).
  14. C. Liu, Y. Zhou, G. Wang, Y. Yin, C. Li, H. Huang, D. Guan, Y. Li, S. Wang, H. Zheng, C. Liu, Y. Han, J. W. Evans, F. Liu, and J. Jia, Sierpiński structure and electronic topology in Bi thin films on InSb(111)B surfaces, Phys. Rev. Lett. 126, 176102 (2021).
  15. R. Yadav, R. D. P. Maciel, S. Benter, C. S. Ong, O. Eriksson, A. Mikkelsen, and R. Timm, Bi trimers and self-limiting Bi-Sb interface formation upon Bi deposition on InSb(111)B surfaces, available SSRN (2024), doi:10.2139/ssrn.5059709.
  16. R. Canyellas, C. Liu, R. Arouca, L. Eek, G. Wang, Y. Yin, D. Guan, Y. Li, S. Wang, H. Zheng, C. Liu, J. Jia, and C. Morais Smith, Topological edge and corner states in bismuth fractal nanostructures, Nat. Phys. 20, 1421 (2024).
  17. R. Stühler, F. Reis, T. Müller, T. Helbig, T. Schwemmer, R. Thomale, J. Schäfer, and R. Claessen, Tomonaga–Luttinger liquid in the edge channels of a quantum spin Hall insulator, Nat. Phys. 16, 47 (2020).
  18. L. Aggarwal, P. Zhu, T. L. Hughes, and V. Madhavan, Evidence for higher order topology in Bi and Bi0.92Sb0.08, Nat. Commun. 12, 4420 (2021).
  19. See Supplemental Material at http://link.aps.org/supplemental/10.1103/mp9b-hgz1 for biased dependent STM images of clean InSb(111)A, Bi-incorporation model, autocorrelation function, additional STS on trimers, core-level XPS spectra, XPS fitting parameters and thickness estimation, photon energy dependent surface states, schematics of Rashba splitting, and analysis of energy dispersion curve. The Supplemental Material also contains the following references:  [14, 15, 20, 21, 22, 23, 42].
  20. M. Mohai and I. Bertti, Calculation of overlayer thickness on curved surfaces based on XPS intensities, Surf. Interface Anal. 36, 805 (2004).
  21. J. E. Castle, in Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy, edited by D. Briggs and M. P. Seah (John Wiley and Sons Ltd, Chichester, 1983), p. 533, Surf. Interface Anal. 6, 302 (1984).
  22. H. Shinotsuka, S. Tanuma, C. J. Powell, and D. R. Penn, Calculations of electron inelastic mean free paths. XII. Data for42 inorganic compounds over the 50 eV to 200 keV range withthe full Penn algorithm, Surf Interface Anal. 51, 427 (2018).
  23. S. M. Sze and K. K. Ng, Appendix F Properties of Important Semiconductors, in Physics of Semiconductor Devices (John Wiley & Sons, 2006), p. 789.
  24. J. Bohr, R. Feidenhans'l, M. Nielsen, M. Toney, R. L. Johnson, and I. K. Robinson, Model-independent structure determination of the InSb(111)2 × 2 surface with use of synchrotron x-ray diffraction, Phys. Rev. Lett. 54, 1275 (1985).
  25. T. Mishima and T. Osaka, Profile imaging of the InSb{111}A,B-(2×2) surfaces, Surf. Sci. 395, L256 (1998).
  26. M. Nishizawa, T. Eguchi, T. Misima, J. Nakamura, and T. Osaka, Structure of the InSb(111)A−(2√3×2√3)−R30∘ surface and its dynamical formation processes, Phys. Rev. B 57, 6317 (1998).
  27. S. Cho, Y.-H. Um, Y. Kim, George, K. L. Wong, J. B. Ketterson, J.-I. Hong, and G. K. L. Wong, Bi epitaxy on polar InSb(111)A/B faces, J. Vac. Sci. Technol. A 20, 1191 (2002).
  28. P. Ebert, Nano-scale properties of defects in compound semiconductor surfaces, Surf. Sci. Rep. 33, 121 (1999).
  29. P. M. Koenraad and M. E. Flatté, Single dopants in semiconductors, Nat. Mater. 10, 91 (2011).
  30. N. Sato, T. Nagao, and S. Hasegawa, Two-dimensional adatom gas phase on the Si(111)−√3×√3−Ag surface directly observed by scanning tunneling microscopy, Phys. Rev. B 60, 16083 (1999).
  31. R. M. Feenstra, Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors, Phys. Rev. B 50, 4561 (1994).
  32. Y.-P. Liu, L. Södergren, S. Fatemeh Mousavi, Y. Liu, F. Lindelöw, E. Lind, R. Timm, and A. Mikkelsen, Low temperature scanning tunneling microscopy and spectroscopy on laterally grown InxGa1−xAs nanowire devices, Appl. Phys. Lett. 117, 163101 (2020).
  33. C. L. Littler and D. G. Seiler, Temperature dependence of the energy gap of InSb using nonlinear optical techniques, Appl. Phys. Lett. 46, 986 (1985).
  34. R. Timm, R. M. Feenstra, H. Eisele, A. Lenz, L. Ivanova, E. Lenz, and M. Dähne, Contrast mechanisms in cross-sectional scanning tunneling microscopy of GaSb/GaAs type-II nanostructures, J. Appl. Phys. 105, 53 (2009).
  35. M. Hjort, S. Lehmann, J. Knutsson, R. Timm, D. Jacobsson, E. Lundgren, K. A. Dick, and A. Mikkelsen, Direct imaging of atomic scale structure and electronic properties of GaAs wurtzite and zinc blende nanowire surfaces, Nano Lett. 13, 4492 (2013).
  36. Z. Qu, Y. Sugawara, and Y. Li, Influence of tip-induced band bending on tunnelling spectra of semiconductor surfaces, Nanotechnology 18, 44015 (2007).
  37. J. T. Dong, H. S. Inbar, C. P. Dempsey, A. N. Engel, and C. J. Palmstrøm, Strain solitons in an epitaxially strained van der waals-like material, Nano Lett. 24, 4493 (2024).
  38. S. Yaginuma, K. Nagaoka, T. Nagao, G. Bihlmayer, Y. M. Koroteev, E. V. Chulkov, and T. Nakayama, Electronic structure of ultrathin bismuth films with A7 and black-phosphorus-like structures, J. Phys. Soc. Jpn. 77, 014701 (2007).
  39. K. Szamota-Leandersson, M. Leandersson, M. Göthelid, and U. O. Karlsson, Correlated development of a (2 × 2) reconstruction and a charge accumulation layer on the InAs(111)-Bi surface, Surf. Sci. 605, 12 (2011).
  40. H. Du, X. Sun, X. Liu, X. Wu, J. Wang, M. Tian, A. Zhao, Y. Luo, J. Yang, B. Wang, and J. G. Hou, Surface Landau levels and spin states in bismuth (111) ultrathin films, Nat. Commun. 7, 10814 (2016).
  41. Y. M. Koroteev, G. Bihlmayer, J. E. Gayone, E. V. Chulkov, S. Blügel, P. M. Echenique, and P. Hofmann, Strong spin-orbit splitting on Bi surfaces, Phys. Rev. Lett. 93, 046403 (2004).
  42. T. Hirahara, K. Miyamoto, I. Matsuda, T. Kadono, A. Kimura, T. Nagao, G. Bihlmayer, E. V. Chulkov, S. Qiao, K. Shimada, H. Namatame, M. Taniguchi, and S. Hasegawa, Direct observation of spin splitting in bismuth surface states, Phys. Rev. B 76, 153305 (2007).
  43. I. N. Yakovkin, Dependence of the band structure of Bi(111) bilayers on lattice constant and spin-orbit splitting induced by a H monolayer, J. Phys. Chem. Solids 129, 277 (2019).
  44. T.-R. Chang, Q. Lu, X. Wang, H. Lin, T. Miller, T.-C. Chiang, and G. Bian, Band topology of bismuth quantum films, Crystals 9, 510 (2019).
  45. K. Sakamoto, H. Kakuta, K. Sugawara, K. Miyamoto, A. Kimura, T. Kuzumaki, N. Ueno, E. Annese, J. Fujii, A. Kodama, T. Shishidou, H. Namatame, M. Taniguchi, T. Sato, T. Takahashi, and T. Oguchi, Peculiar rashba splitting originating from the two-dimensional symmetry of the surface, Phys. Rev. Lett. 103, 156801 (2009).
  46. N. V. Denisov, A. A. Alekseev, O. A. Utas, S. G. Azatyan, A. V. Zotov, and A. A. Saranin, Bismuth–indium two-dimensional compounds on Si(111) surface, Surf. Sci. 651, 105 (2016).

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