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Second harmonic generation imaging of local antiferroelectric-ferroelectric phase transitions in a PbZrO3 thin film

A. Levchuk1, P. Dufour2, K. Parmar2,3, M. Viret1, T. Maroutian3, S. Fusil2, V. Garcia2,*, and J.-Y. Chauleau1,†

  • *Contact author: vincent.garcia@cnrs-thales.fr
  • †Contact author: jean-yves.chauleau@cea.fr

Phys. Rev. Materials 10, L051401 – Published 14 May, 2026

DOI: https://doi.org/10.1103/mh4w-r8qw

Abstract

Polar orders play a central role in modern technologies, spanning applications from information storage and energy harvesting to neuromorphic computing. While ferroelectric (FE) implementation into devices is more mature, the development of antiferroelectric (AFE)-based devices is still in its infancy. However, AFEs are emerging as promising candidates for multiple applications such as energy storage (supercapacitors), all-solid refrigeration (electrocaloric cooling) or thermal switches. In this work, we probe the transition between the antipolar and polar states in epitaxial layers of the prototypical antiferroelectric oxide, PbZrO3. We discuss operando second-harmonic generation (SHG) imaging as a powerful tool, providing spatially resolved insights into the electric-field-induced AFE–FE phase transitions. This technique enables the mapping of local symmetry-breaking and phase coexistence during switching, offering a route to unravel the microscopic mechanisms governing AFE–FE transitions in such functional oxides.

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