We present a fully analytical description for the stationary vapor-solid (VS) distributions of III-V ternary epilayers and nanomaterials of different types in the most complex case of ternaries with two highly volatile group V elements. The approach is based on the minimum free energy principle and a self-consistent determination of the total growth rate of a ternary structure. This enables one to circumvent the uncertainty in the unmeasurable concentrations of group V atoms in a mother phase. The analytic VS distribution is a combination of the kinetic Langmuir-McLean distribution and the equilibrium distribution, whose weights are regulated by the effective III/V ratio. The model fits well the whole set of data on the stationary compositions of epilayers and catalyst-free and vapor-liquid-solid nanowires in the four material systems $\mathrm{AlS}{\mathrm{b}}_x{\mathrm{As}}_{1-x}, \mathrm{InS}{\mathrm{b}}_x{\mathrm{As}}_{1-x}, \mathrm{In}{\mathrm{P}}_x{\mathrm{As}}_{1-x}$ and $\mathrm{Ga}{\mathrm{P}}_x{\mathrm{As}}_{1-x}$ and provides a method for controlling the compositions of III-V ternary nanomaterials by the growth parameter tuning.

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• Composition
• Nanowires
• Materials modeling