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    Epitaxial integration of superconducting α-Sn films and topological insulator (Bi,Sb)2Te3

    Haoyang Wu1,*, Zongzheng Cao1,*, Rui Wu2,†, Jumei Jiang1, Chong Liu2, Yunyi Zang2, Zhen Wang3,4, Qi-Kun Xue1,2,5,‡, and Ding Zhang1,2,6,§

    • *These authors contributed equally to this work.
    • †Contact author: wu_rui@baqis.ac.cn
    • ‡Contact author: qkxue@mail.tsinghua.edu.cn
    • §Contact author: dingzhang@mail.tsinghua.edu.cn

    Phys. Rev. Materials 9, 094803 – Published 10 September, 2025

    DOI: https://doi.org/10.1103/jndq-cxmf

    Abstract

    Realizing an epitaxial interface between a superconductor (SC) and a topological insulator (TI) is crucial for studying emergent quantum phenomena such as topological superconductivity. So far, this epitaxial heterostructure has been mainly investigated by growing TI films on SC substrates. Here, we reverse the order by epitaxially growing ultrathin films of α-Sn, a SC layer, on top of TIs. In situ scanning tunneling microscopy reveals that similar thin films of α-Sn (111), from monolayer to quintuple layer, can be realized on a wide range of substrates from n-type Bi2Te3 to p-type Sb2Te3. We obtain superconductivity with a transition temperature around 1 K from these heterostructures across the n-type to p-type crossover. The large spin-orbit coupling of our systems can give rise to enhanced in-plane upper critical magnetic field. Our work reveals the potential of employing the α−Sn/(Bi,Sb)2Te3 heterostructures for transport studies on emergent phenomena due to nontrivial topology.

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