Bipolar spin-valve effect in complex-oxide superconductor/half-metallic ferromagnet junctions
Phys. Rev. Materials 10, 015002 – Published 13 January, 2026
DOI: https://doi.org/10.1103/gr8k-15wt
Abstract
Superconductor/ferromagnet (S/F) interfaces are fertile ground for emergent phenomena that result from competing interactions and proximity effects. Beyond their fundamental interest, these phenomena can be exploited in devices to create novel functionalities. Here, we realize all-oxide junctions based on S/F/S/F/S heterostructures that combine the high- S and the half-metallic F , in which electrical transport is measured in current-perpendicular-to-plane configuration. These junctions show a spin-valve effect: their electrical resistance switches as the relative orientation of the magnetizations of the F layers is switched from parallel to antiparallel by a magnetic field. However, their behavior is unusual: in contrast to conventional spin valves, whether the resistance increases or decreases upon switching depends on temperature. This can be understood considering the interplay between superconducting proximity effects, spin-dependent scattering, and magnetic exchange effects. These results show a path towards high-temperature superconducting spin-valve devices for advanced quantum sensing.
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Magnetic Phenomena at Oxide Interfaces: Fundamentals to Devices
The Editors of Physical Review Materials are pleased to present the Collection on Magnetic Phenomena at Oxide Interfaces, highlighting cutting-edge advances in oxide interface magnetism and its applications. The Collection is being guest-edited by Lucas Caretta from Brown University (USA) and Jacobo Santamaria from Universidad Complutense de Madrid (Spain). Every article published in this collection underwent a rigorous peer review process, adhering to the same high standards applied to all papers. The Physical Review Materials editorial team managed the peer review and made all editorial decisions.