Flexible polymer transistors are key components in emerging sensor technologies, such as electronic skin for next-generation biomedical prosthetics, and their charge transport mechanisms differ fundamentally from those of conventional inorganic semiconductors. In this work we report the fabrication of an ambipolar polymer field-effect transistor capable of transporting both electrons and holes. The devices are synthesized using a nanoelectrochemical cyclic voltammetry method, which enables the formation of HCl-doped polyaniline nanofibers. These nanofibers introduce Gaussian-distributed tail states within the energy gap, thereby facilitating ambipolar transport. Electrical characterization is carried out through $I_{\mathrm{D}}\text{−}{V}_{\mathrm{D}}$ and $I_{\mathrm{D}}\text{−}{V}_{\mathrm{G}}$ measurements as well as temperature-dependent resistivity and mobility studies from 300 K down to 24 K. Analysis of the temperature-dependent mobilities using the multiple trapping and release and the variable-range hopping (VRH) models reveals that electron transport is predominantly governed by VRH, while hole transport shows weaker agreement with either model. Three device types with different carrier densities provide a useful platform for controlling carrier populations and for investigating dual-carrier transport across distinct temperature regimes. The results demonstrate that the nanofiber morphology, combined with hopping transport, enhances electron-electron interactions and broadens the energy gap through Gaussian tail states. This broadened tail-state band enables efficient ambipolar transport, yielding a high field-effect mobility of approximately $4\mathrm{c}{\mathrm{m}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$, representing a significant advancement in conducting polymer transistors.

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• Devices
• Electric field effects
• Electronic materials
• Hopping transport
• Organic electronics
• Polymer synthesis