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    Investigating the genesis of negative magnetization, exchange bias, and electrical properties in Gd2CoRuO6

    Priyanka Mahalle1,2, A. Kumar1,2,*, G. J. Cuello3, Ivan da Silva4, M. Krzystyniak4, and S. M. Yusuf1,2,†

    • *Contact author: amitkr@barc.gov.in
    • †Contact author: smyusuf@barc.gov.in

    Phys. Rev. Materials 9, 104407 – Published 8 October, 2025

    DOI: https://doi.org/10.1103/fh1z-bxqt

    Abstract

    We report a neutron diffraction study using epithermal neutrons to probe the origin of negative magnetization (NM) and its correlation with exchange bias and electronic transport in Gd2CoRuO6. This double perovskite crystallizes in the monoclinic P21/n space group and exhibits magnetic ordering at TC≈51 K. Magnetization measurements reveal NM below the compensation temperature (Tcomp≈11 K), which shifts to lower temperatures with increasing magnetic field and vanishes for H ≥ 500 Oe. Low temperature (6 K) neutron diffraction study shows that Co2+ and Ru4+ sublattices undergo a canted antiferromagnetic type ordering with antiferromagnetic spin alignment along the c axis and a ferromagnetic component along the b axis, while no ordered magnetic moment is detected for Gd3+ ions. Specific heat exhibits a sharp λ-anomaly at 3.5 K, confirming the long-range magnetic ordering of Gd3+ sublattice. The observed NM behavior in M(T) curves is explained by polarization of Gd3+ moments induced by the internal field from the canted Co/Ru sublattice, consistent with Cooke's model. A detailed examination of field-cooled M vs H curves reveals the presence of exchange bias and its sign reversal around the Tcomp in the sample. Interestingly, exchange-bias magnitude depends on the maximum field applied during the hysteresis measurements. Furthermore, the coercivity and remnant magnetization values, derived from the M(H) curves, exhibit a minimum around Tcomp. Electrical resistivity follows a semiconducting variable-range hopping model below 100 K, with a sharp increase below 50 K coinciding with TC, indicating a strong coupling between structural distortions, magnetic interactions, and charge localization. These findings reveal an intricate coupling of structural, magnetic, and electronic degrees of freedom in Gd2CoRuO6, highlighting its potential for spintronic and magnetic device applications where tunable compensation and exchange bias effects and their intertwined behavior are desirable.

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