Two-dimensional magnetic materials with tunable electronic and magnetic properties show great potential for spintronic applications. Using first-principles calculations, we systematically investigate monolayer ${\mathrm{CuPdBr}}_3$ and identify it as a zigzag antiferromagnetic (AF-Zigzag) semiconductor with an indirect band gap. While the AF-Zigzag ground state remains robust under strain, its magnetic configuration can be effectively tuned through carrier doping. Notably, both electron and hole doping induce a magnetic phase transition from the AF-Zigzag to a ferromagnetic (FM) state, with the stability of the FM state enhanced by increasing doping concentration. The corresponding critical temperature can be increased to about 100 K. Remarkably, antiferromagnetic (AFM) monolayer ${\mathrm{CuPdBr}}_3$, driven by carrier doping, behaves as a bipolar magnetic semiconductor (BMS). In the FM state induced by hole doping, the spin-up channel becomes metallic, giving rise to a ferromagnetic half-metal (FMHM), whereas electron doping results in a FMHM with a metallic spin-down channel. The carrier-doping-induced BMS behavior of AFM monolayer ${\mathrm{CuPdBr}}_3$ suggests its potential application in spin field-effect transistor devices. Furthermore, in carrier-doped monolayer ${\mathrm{CuPdBr}}_3$ with the FM state, spin-orbit coupling opens energy gaps around the spin-polarized non-Dirac band degeneracies at the $\mathrm{\Gamma }$ point, resulting in significant anomalous Hall conductivity. These findings highlight AFM monolayer ${\mathrm{CuPdBr}}_3$ as a promising candidate for the development of two-dimensional antiferromagnet-based spintronic devices and the exploration of novel magnetic phenomena.

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• Anomalous Hall effect
• Electronic structure
• Magnetic phase transitions
• Spintronics
• 2-dimensional systems
• Half-metals
• Magnetic semiconductors
• Magnetic thin films
• Monolayer films
• First-principles calculations