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Oxygen deficiency and valency reconstruction in multiferroic V-doped HfO2

Vincenzo Fiorentini

Phys. Rev. Materials 10, 104412 – Published 15 October, 2026

DOI: https://doi.org/10.1103/dfcj-rb7w

Abstract

The interplay of oxygen deficiency and vanadium multiple valency in the candidate multiferroic V-doped Pca21 hafnia HfO2 is studied by first-principles calculations. Low-lying V majority gap states accept electrons from oxygen-vacancy donors, reducing their formation energy, and converting nominal V4+ centers into V3+. The resulting local magnetization and screening changes are reflected in the calculated V core-level shifts, which are consistent with the experimentally observed x-ray photoelectron spectroscopy signatures. The calculated V3+/V4+ population ratio determined by oxygen vacancies only matches experiment in reducing conditions, suggesting that additional electron reservoirs may contribute under atomic-layer-deposition growth conditions. A similar scenario also seems to apply to the recently observed multiferroicity in Cr-doped hafnia, where oxygen deficiency is expected from the synthesis route.

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References (19)

  1. V. Fiorentini, P. Alippi, and G. Cuniberti, Coexistence of ferroelectricity and ferromagnetism in vanadium-doped HfO2, Phys. Rev. Mater. 9, 114415 (2025).
  2. E. Ansari, N. Martinolli, E. Hartmann, A. Varini, I. Stolichnov, and A. M. Ionescu, Vanadium-doped hafnium oxide: A high-endurance ferroelectric thin film with demonstrated negative capacitance, Nano Lett. 25, 2702 (2025).
  3. H. Zhang, H. Bu, D. Zhang, Y. Tu, Y. Li, Z. Shen, W. Pan, Z. Guan, Q. Zhang, K. Chen, Y. Yang, S. Shen, Y. Yin, and X. Li, Observation of room-temperature multiferroicity with strong magnetoelectric coupling in hafnia thin films, Nat. Commun. 17, 5776 (2026).
  4. The ratio is estimated graphically from Supplemental Fig. S1(b) of Ref. [2].
  5. G. Kresse and J. Furthmüller, Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set, Phys. Rev. B 54, 11169 (1996).
  6. P. E. Blöchl, Projector augmented-wave method, Phys. Rev. B 50, 17953 (1994); G. Kresse and D. Joubert, From ultrasoft pseudopotentials to the projector augmented-wave method, ibid. 59, 1758 (1999).
  7. J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized gradient approximation made simple, Phys. Rev. Lett. 77, 3865 (1996).
  8. S. L. Dudarev, G. A. Botton, S. Y. Savrasov, C. J. Humphreys, and A. P. Sutton, Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study, Phys. Rev. B 57, 1505 (1998).
  9. M. Aykol and C. Wolverton, Local environment dependent GGA + U method for accurate thermochemistry of transition metal compounds, Phys. Rev. B 90, 115105 (2014); A. Jain, G. Hautier, S. P. Ong, C. J. Moore, C. C. Fischer, K. A. Persson, and G. Ceder, Formation enthalpies by mixing GGA and GGA + U calculations, ibid. 84, 045115 (2011); see also the Materials Project docs at https://tinyurl.com/bdxz6ech.
  10. J. Heyd, G. E. Scuseria, and M. Ernzerhof, Hybrid functionals based on a screened Coulomb potential, J. Chem. Phys. 118, 8207 (2003).
  11. C. G. Van de Walle, D. B. Laks, G. F. Neumark, and S. T. Pantelides, First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe, Phys. Rev. B 47, 9425 (1993).
  12. M. Leslie and M. J. Gillan, The energy and elastic dipole tensor of defects in ionic crystals calculated by the supercell method, J. Phys. C: Solid State Phys. 18, 973 (1985).
  13. H2 is not produced in the ligand exchange (by-products are amines, not H2 or hydrocarbons), and oxygen transitions directly from water into the solid.
  14. N. Capron, P. Broqvist, and A. Pasquarello, Migration of oxygen vacancy in HfO2 and across the HfO2/SiO2 interface: A first-principles investigation, Appl. Phys. Lett. 91, 192905 (2007).
  15. M. Alessandri, R. Piagge, S. Alberici, E. Bellandi, M. Caniatti, G. Ghidini, A. Modelli, G. Pavia, E. Ravizza, A. Sebastiani, C. Wiemer, S. Spiga, M. Fanciulli, E. Cadelano, G. M. Lopez, and V. Fiorentini, High-k materials in flash memories, in Physics and Technology of High-k Gate Dielectric III (The Electrochemical Society, Pennington, NJ, 2006), p. 91.
  16. A. Eichler, Tetragonal Y-doped zirconia: Structure and ion conductivity, Phys. Rev. B 64, 174103 (2001)
  17. The energy change as a function of local magnetization direction, calculated allowing for spin-orbit coupling and noncollinearity for a single V substitution, is very small (<2 meV/cell or 0.03MJ/m3). This is due to the occupied V wave function being real combinations of t2g orbitals; the angular momentum 〈L〉 then vanishes, and hence so does the first-order spin-orbit coupling.
  18. R. D. King-Smith and D. Vanderbilt, Theory of polarization of crystalline solids, Phys. Rev. B 47, 1651 (1993); R. Resta, Macroscopic polarization in crystalline dielectrics: The geometric phase approach, Rev. Mod. Phys. 66, 899 (1994).
  19. Scripts to reproduce the figures, along with other miscellaneous data, can be obtained via https://gitlab.com/vfiore/vnx-paper-scripts.git.

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