Recently, ${\mathrm{NiTe}}_2$ has emerged as a representative metallic transition-metal dichalcogenide (TMD), owing to its tunable electronic transport, high current-carrying capability, and experimental accessibility. However, its phonon transport behavior remains unclear. Here, we employ first-principles calculations to investigate the lattice thermal conductivity ($k_{\mathrm{p}}$) of both 1T and 1H phases for ${\mathrm{NiTe}}_2$. Our results show that in 1T phase, four-phonon (4ph) processes reduce $k_{\mathrm{p}}$ by up to 58.2%, lowering $k_{\mathrm{p}}$ from 3.79/4.69 to 1.70/1.96 W ${\mathrm{m}}^{-1} {\mathrm{K}}^{-1}$ along the armchair/zigzag directions. Electron-phonon interaction (EPI) leads to an additional maximum 29.5% suppression, reducing $k_{\mathrm{p}}$ to 0.58 W ${\mathrm{m}}^{-1} {\mathrm{K}}^{-1}$ at a carrier concentration of 1 × ${10}^{14} {\mathrm{cm}}^{-2}$ in $n$-type 1T-${\mathrm{NiTe}}_2$. In contrast, the 1H phase exhibits a more moderate decrease, with $k_{\mathrm{p}}$ reduced from 3.61 to 2.44 W ${\mathrm{m}}^{-1} {\mathrm{K}}^{-1}$ by 4ph scattering. The most distinct EPI effect in 1H-${\mathrm{NiTe}}_2$ occurs in the intrinsic state, further reducing $k_{\mathrm{p}}$ to 1.57 W ${\mathrm{m}}^{-1} {\mathrm{K}}^{-1}$. The more pronounced suppression in $k_{\mathrm{p}}$ in 1T-${\mathrm{NiTe}}_2$ originates from the larger phonon band gap and higher electronic density of states compared with 1H-${\mathrm{NiTe}}_2$. Our results suggest viable routes to tune phonon transport in TMDs via phase control and carrier engineering.

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• Anharmonic lattice dynamics
• Density of states
• Electron-phonon coupling
• Electronic structure
• Phonons
• Thermal properties
• Boltzmann theory
• First-principles calculations