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  • Letter

Anomalous Hall effect emerging from field-induced Weyl nodes in SmAlSi

Yuxiang Gao1,2, Shiming Lei1,2,*, Eleanor M. Clements3,4, Yichen Zhang1,2, Xue-Jian Gao5, Songxue Chi6, Kam Tuen Law5, Ming Yi1,2, Jeffrey W. Lynn3 et al.

Emilia Morosan1,2,†

  • *Present address: Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong, China.
  • †Contact author: emorosan@rice.edu

Phys. Rev. Materials 9, L061201 – Published 4 June, 2025

DOI: https://doi.org/10.1103/PhysRevMaterials.9.L061201

Abstract

The intrinsic anomalous Hall effect (AHE) has been reported in numerous ferromagnetic Weyl semimetals. However, the AHE in the antiferromagnetic (AFM) or paramagnetic (PM) state of Weyl semimetals has rarely been observed experimentally. Different mechanisms have been proposed to account for the emergence of the AHE from different types of magnetic order. In this Letter, we propose a new model that explains the observed AHE in both the AFM and PM states of the noncentrosymmetric Weyl semimetal SmAlSi. The newly proposed mechanism is based on magnetic-field-induced Weyl node evolution, which qualitatively explains the temperature dependence of the anomalous Hall conductivity, which displays unconventional power-law behavior in both the AFM and PM states of SmAlSi.

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