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Strain-enabled control of the vanadium qudit in silicon carbide

Philipp Koller1,2, Thomas Astner1, Benedikt Tissot3,4, Guido Burkard3, and Michael Trupke1,*

  • 1Institute for Quantum Optics and Quantum Information (IQOQI), Austrian Academy of Sciences, Boltzmanngasse 3, 1090 Vienna, Austria
  • 2University of Vienna, Faculty of Physics & Vienna Doctoral School in Physics, Boltzmanngasse 5, A-1090 Vienna, Austria
  • 3Department of Physics, University of Konstanz, D-78457 Konstanz, Germany
  • 4Center for Hybrid Quantum Networks, Niels Bohr Institute, University of Copenhagen, Blegdamsvej 17, 2100 Copenhagen Ø, Denmark

  • *Contact author: michael.trupke@oeaw.ac.at
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Phys. Rev. Materials 9, L043201 – Published 24 April, 2025

DOI: https://doi.org/10.1103/PhysRevMaterials.9.L043201

Abstract

Vanadium in silicon carbide is a promising spin photon interface candidate with optical transitions in the telecom range and a long lived electron spin, hosted in an advanced semiconductor platform. In this detailed investigation of the defect's 16-dimensional ground state spin manifold at millikelvin temperatures, a wide range of previously unreported transitions are observed which are accurately described using a theoretical model that includes strain. Using a superconducting microcoil we achieve Rabi frequencies exceeding 20MHz and perform the first coherent manipulation of a direct hyperfine transition. These insights further underscore the defect's potential for strain engineering and sensing, as well as for fault-tolerant qudit encoding.

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Phys. Rev. Materials 9, L043201– Published 24 April, 2025
  • Received 26 November 2024
  • Revised 31 January 2025
  • Accepted 27 March 2025
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