Strain-induced lateral heterostructures: Hole localization and the emergence of flat bands in rippled <math xmlns="http://www.w3.org/1998/Math/MathML"><msub><mi>MoS</mi><mn>2</mn></msub></math> monolayers

Meshal Alawein; Joel W. Ager; Ali Javey; D. C. Chrzan

doi:10.1103/PhysRevMaterials.9.L021002

Letter

Strain-induced lateral heterostructures: Hole localization and the emergence of flat bands in rippled ${MoS}_{2}$ monolayers

Meshal Alawein^1,2, Joel W. Ager ^2,3, Ali Javey ^1,2, and D. C. Chrzan ^2,3,*

¹Electrical Engineering and Computer Science, University of California, Berkeley, California 94720, USA
²Materials Sciences Division, Lawrence Berkeley National Laboratories, Berkeley, California 94720, USA
³Materials Science and Engineering, University of California, Berkeley, California 94720, USA

^*Contact author: dcchrzan@berkeley.edu

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Phys. Rev. Materials 9, L021002 – Published 25 February, 2025

DOI: https://doi.org/10.1103/PhysRevMaterials.9.L021002

Abstract

The formation of 2D lateral heterostructures in rippled ${MoS}_{2}$ and similar transition metal dichalcogenides (TMDs) is studied using density functional theory. Compression of rippled TMDs beyond a threshold compression leads to the formation of a flat valence band associated with strongly localized holes. The implications for exciton manipulation and the emergence of one-dimensional heavy fermion behavior are discussed.

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Strain-induced lateral heterostructures: Hole localization and the emergence of flat bands in rippled ${MoS}_{2}$ monolayers

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Strain-induced lateral heterostructures: Hole localization and the emergence of flat bands in rippled MoS2 monolayers

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Strain-induced lateral heterostructures: Hole localization and the emergence of flat bands in rippled ${MoS}_{2}$ monolayers