L. Bellaiche^3,8, V. Nagarajan^2,3, and T. Banerjee^3,4,‡

• ¹The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Physical and Chemical Sciences, University of Canterbury, Christchurch 8041, New Zealand
• ²School of Materials Science and Engineering, UNSW Sydney, Kensington 2052, Australia
• ³Australian Research Council Centre of Excellence in Future Low Energy Electronics, Kensington 2052, Australia
• ⁴University of Groningen, Zernike Institute for Advanced Materials, 9747 AG Groningen, The Netherlands
• ⁵Jiangsu Key Laboratory of Frontier Material Physics and Devices, School of Physical Science and Technology, Soochow University, Suzhou 215006, China
• ⁶Key Laboratory of Computational Physical Sciences (Ministry of Education), Institute of Computational Physical Sciences, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China and Shanghai Qi Zhi Institute, Shanghai 200030, China
• ⁷Université Rouen Normandie, INSA Rouen Normandie, CNRS, Normandie Université, GPM UMR 6634, F-76000 Rouen, France
• ⁸Smart Ferroic Materials Center, Department of Physics and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA and Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv 6997801, Israel

• ^*These authors contributed equally to this work.
• ^†Contact author: daniel.sando@canterbury.ac.nz
• ^‡Contact author: t.banerjee@rug.nl