For the past few years, two-dimensional (2D) ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride, one of the most used 2D materials, has opened the route to its integration into complex van der Waals heterostructures combining hybrid properties. Here we show that opposite polarizations in ferroelectric domains of a folded $h\mathrm{BN}$ layer can imprint local $n$ and $p$ doping in a semiconducting transition metal dichalcogenide ${\mathrm{WSe}}_2$ monolayer. We demonstrate that ${\mathrm{WSe}}_2$ can be used as an optical probe of ferroelectricity in $h\mathrm{BN}$ and show that the doping density and type can be controlled with the position of the semiconductor with respect to the ferroelectric interface. Our results establish the ferroelectric $h\mathrm{BN}$/${\mathrm{WSe}}_2$ van der Waals stacking as a promising optoelectronic structure.

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• Ferroelectricity
• Optoelectronics
• Hexagonal boron nitride
• Transition metal dichalcogenides
• Twisted heterostructures
• Photoluminescence