Export citation

Export citation

Choose format for download:

Download Citation
  • Letter

One-dimensional electronic states in a natural misfit structure

Alla Chikina1, Gargee Bhattacharyya2, Davide Curcio1, Charlotte E. Sanders3, Marco Bianchi1, Nicola Lanatà4, Matthew Watson5, Cephise Cacho5, Martin Bremholm6 et al.

Philip Hofmann1,*

  • 1Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark
  • 2Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
  • 3Central Laser Facility, STFC Rutherford Appleton Laboratory, Harwell OX11 0QX, United Kingdom
  • 4School of Physics and Astronomy, Rochester Institute of Technology, Rochester, New York 14623, USA
  • 5Diamond Light Source, Division of Science, Didcot OX11 0QX, United Kingdom
  • 6Department of Chemistry, Interdisciplinary Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark

  • *philip@phys.au.dk

Phys. Rev. Materials 6, L092001 – Published 28 September, 2022

DOI: https://doi.org/10.1103/PhysRevMaterials.6.L092001

Abstract

Misfit compounds are thermodynamically stable stacks of two-dimensional materials, forming a three-dimensional structure that remains incommensurate in one direction parallel to the layers. As a consequence, no true bonding is expected between the layers, with their interaction being dominated by charge transfer. In contrast to this well-established picture, we show that interlayer coupling can strongly influence the electronic properties of one type of layer in a misfit structure, in a similar way to the creation of modified band structures in an artificial moiré structure between two-dimensional materials. Using angle-resolved photoemission spectroscopy with a micron-scale light focus, we selectively probe the electronic properties of hexagonal NbSe2 and square BiSe layers that terminate the surface of the (BiSe)1+δNbSe2 misfit compound. We show that the band structure in the BiSe layers is strongly affected by the presence of the hexagonal NbSe2 layers, leading to quasi-one-dimensional electronic features. The electronic structure of the NbSe2 layers, on the other hand, is hardly influenced by the presence of the BiSe. Using density functional theory calculations of the unfolded band structures, we argue that the preferred modification of one type of band is mainly due to the atomic and orbital character of the states involved, opening a promising way to design electronic states that exploit the partially incommensurate character of the misfit compounds.

Physics Subject Headings (PhySH)

Authorization Required

We need you to provide your credentials before accessing this content.

Supplemental Material (Subscription Required)

References (Subscription Required)

Outline

Information

Sign In to Your Journals Account

Filter

Filter

Article Lookup

Enter a citation