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Ultrahigh energy storage density in lead-free antiferroelectric rare-earth-substituted bismuth ferrite

Yehui Zhang1, Laurent Bellaiche2, and Bin Xu1,*

  • 1Institute of Theoretical and Applied Physics, Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China
  • 2Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA

  • *binxu19@suda.edu.cn

Phys. Rev. Materials 6, L051401 – Published 20 May, 2022

DOI: https://doi.org/10.1103/PhysRevMaterials.6.L051401

Abstract

Dielectric capacitors hold an enormous advantage for energy storage that requires a fast charging/discharging rate; but relatively low energy capacity is a key limitation for conventional dielectric materials. Recently, design strategies by tuning the ferroelectric BiFeO3 (BFO) to an antiferroelectric or relaxor have shown great promise, especially owing to the large polarization at high electric field. Here, using a first-principles-based method, it is predicted that rare-earth substitution of varied elements and composition can systematically tune the stability of the antiferroelectric phase, leading to further enhanced energy densities and high efficiencies, for instance, reaching 239 J cm−3 in thulium substituted BFO and generally beyond 80%, respectively. The storage performance is further interpreted based on a simple model, pointing to the importance of transition fields, polarization of the ferroelectric state, and dielectric constant.

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