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  • Letter

Observation of multiple nodal lines in SmSbTe

Sabin Regmi1,*, Gyanendra Dhakal1,*, Fairoja Cheenicode Kabeer2, Neil Harrison3, Firoza Kabir1, Anup Pradhan Sakhya1, Krzysztof Gofryk4, Dariusz Kaczorowski5, Peter M. Oppeneer2 et al.

Madhab Neupane1,†

  • 1Department of Physics, University of Central Florida, Orlando, Florida 32816, USA
  • 2Department of Physics and Astronomy, Uppsala University, P.O. Box 516, S-75120 Uppsala, Sweden
  • 3National High Magnetic Field Laboratory, Los Alamos, New Mexico 87545, USA
  • 4Idaho National Laboratory, Idaho Falls, Idaho 83415, USA
  • 5Institute of Low Temperature and Structure Research, Polish Academy of Sciences, ul. Okólna 2, 50-422 Wrocław, Poland

  • *These authors contributed equally to this work.
  • †Corresponding author: madhab.neupane@ucf.edu

Phys. Rev. Materials 6, L031201 – Published 9 March, 2022

DOI: https://doi.org/10.1103/PhysRevMaterials.6.L031201

Abstract

Having been a ground for various topological fermionic phases, the family of ZrSiS-type 111 materials has been under experimental and theoretical investigations. Within this family of materials, the subfamily LnSbTe (Ln=lanthanideelements) is gaining interest in recent times as the strong correlation effects and magnetism arising from the 4f electrons of the lanthanides can provide an important platform to study the link between topology, magnetism, and correlation. In this Letter, we report the systematic study of the electronic structure of SmSbTe—a member of the LnSbTe subfamily—by utilizing angle-resolved photoemission spectroscopy in conjunction with first-principles calculations, transport, and magnetic measurements. Our experimental results identify multiple Dirac nodes forming the nodal lines along the Γ−X and Z−R directions in the bulk Brillouin zone (BZ) as predicted by our theoretical calculations. A surface Dirac-like state is also observed at the X¯ point of the surface BZ. Our study highlights SmSbTe as a promising candidate to understand the topological electronic structure of LnSbTe materials.

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