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Ultrahigh energy storage density in epitaxial AlN/ScN superlattices

Zhijun Jiang1,2,3, Bin Xu4,*, Hongjun Xiang2,5,6,†, and L. Bellaiche3

  • 1MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, Xi'an 710049, China
  • 2Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, China
  • 3Physics Department and Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, Arkansas 72701, USA
  • 4Jiangsu Key Laboratory of Thin Films, School of Physical Science and Technology, Soochow University, Suzhou 215006, China
  • 5Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
  • 6Shanghai Qi Zhi Institute, Shanghai 200232, China

  • *binxu19@suda.edu.cn
  • †hxiang@fudan.edu.cn

Phys. Rev. Materials 5, L072401 – Published 8 July, 2021

DOI: https://doi.org/10.1103/PhysRevMaterials.5.L072401

Abstract

Dielectric and antiferroelectric materials are particularly promising for high-power energy storage applications. However, relatively low energy density greatly hinders their usage in storage technologies. Here, we report first-principles-based calculations predicting that epitaxial and initially nonpolar AlN/ScN superlattices can achieve an ultrahigh energy density of up to 200J/cm3, accompanied by an ideal efficiency of 100%. We also show that high energy density requires that the system be neither too close nor too far from a ferroelectric phase transition under zero electric field. A phenomenological model is further proposed to rationalize such striking features.

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