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Observation of biexciton emission from single semiconductor nanoplatelets

Lintao Peng1, Wooje Cho2, Xufeng Zhang1, Dmitri Talapin1,2, and Xuedan Ma1,3,4,*

  • 1Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, USA
  • 2Department of Chemistry and James Franck Institute, University of Chicago, Chicago, Illinois 60637, USA
  • 3Consortium for Advanced Science and Engineering, University of Chicago, Chicago, Illinois 60637, USA
  • 4Northwestern-Argonne Institute of Science and Engineering, 2205 Tech Drive, Evanston, Illinois 60208, USA

  • *xuedan.ma@anl.gov

Phys. Rev. Materials 5, L051601 – Published 4 May, 2021

DOI: https://doi.org/10.1103/PhysRevMaterials.5.L051601

Abstract

Quasi-two-dimensional semiconductor nanoplatelets (NPLs) are intriguing systems for studying the influence of Auger recombination processes on the multiexciton emission efficiencies in the weak in-plane confinement regime. We investigate CdSe/CdS core/shell NPLs using cryogenic temperature single particle spectroscopy and observe bright biexciton emission at high excitation powers. The average binding energy of the biexcitons is determined to be 16.5 meV. The observed switching between the biexciton and trion states indicates charging-decharging dynamics of the NPLs mediated by the Auger ionization process. These findings are highly relevant for harvesting efficient biexciton emission for energy, lighting, and quantum applications.

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