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Electronic structure of 3∘-twisted bilayer graphene on 4H-SiC(0001)

Takushi Iimori1, Anton Visikovskiy2, Hitoshi Imamura2, Toshio Miyamachi1, Miho Kitamura3,4, Koji Horiba3,4, Hiroshi Kumigashira3,5, Kazuhiko Mase3,4, Kan Nakatsuji6 et al.

Satoru Tanaka2 and Fumio Komori1,*

  • 1Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
  • 2Department of Applied Quantum Physics and Nuclear Engineering, Kyushu University, Fukuoka 819-0395, Japan
  • 3Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba 305-0801, Japan
  • 4Department of Materials Structure Science, SOKENDAI (The Graduate University for Advanced Studies), Tsukuba 305-0801, Japan
  • 5Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, Sendai 980-8577, Japan
  • 6Department of Materials Science and Engineering, Tokyo Institute of Technology, Yokohama 226-8502, Japan

  • *komori@issp.u-tokyo.ac.jp

Phys. Rev. Materials 5, L051001 – Published 13 May, 2021

DOI: https://doi.org/10.1103/PhysRevMaterials.5.L051001

Abstract

The electronic structure of 3∘-twisted bilayer graphene (TBG) is studied by angle-resolved photoelectron spectroscopy (ARPES). Sub-mm-sized TBG prepared by direct bonding in a high vacuum enabled us to use conventional ARPES band mapping with synchrotron light. The results indicate that strong interlayer coupling makes a moiré potential for the Dirac electrons and significantly modifies the graphene bands around the K¯ points such as the band splitting and electron velocity reduction. The observed electronic structure is consistently reproduced by tight-binding calculations combined with a band unfolding method.

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