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  • Letter
  • Open Access

Band engineering in an epitaxial two-dimensional honeycomb Si6−xGex alloy

A. Fleurence1,*, Y. Awatani1, C. Huet1, F. B. Wiggers2,†, S. M. Wallace1, T. Yonezawa1, and Y. Yamada-Takamura1

  • 1School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai Ishikawa 923-1292, Japan
  • 2MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands

  • *antoine@jaist.ac.jp
  • †Present address: ASML Netherlands B.V., De Run 6501, 5504 DR Veldhoven, The Netherlands.
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Phys. Rev. Materials 5, L011001 – Published 21 January, 2021

DOI: https://doi.org/10.1103/PhysRevMaterials.5.L011001

Abstract

In this Letter, we demonstrate that it is possible to form a two-dimensional (2D) silicenelike Si5Ge compound by replacing the Si atoms occupying on-top sites in the planarlike structure of epitaxial silicene on ZrB2(0001) by deposited Ge atoms. For coverages below 1/6 monolayer, the Ge deposition gives rise to a Si6−xGex alloy (with x between 0 and 1) in which the on-top sites are randomly occupied by Si or Ge atoms. The progressive increase of the valence band maximum with x observed experimentally originates from a selective charge transfer from Ge atoms to Si atoms. These achievements provide evidence for the possibility of engineering the band structure in 2D SiGe alloys in a way that is similar for their bulk counterpart.

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Phys. Rev. Materials 5, L011001– Published 21 January, 2021
  • Received 26 February 2020
  • Revised 16 October 2020
  • Accepted 8 December 2020
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