We report on the photoconductive properties of thin layers of ${\mathrm{MoS}}_2$ flakes (with layer thicknesses ranging between 25–50 nm) beyond room temperatures. Photoconductivity measurements at multiple temperatures, between 290 and 425 K were performed using a laser source of $\lambda$ = 640 nm. The variation of photocurrent with temperature at effective laser intensities, $P_{\mathrm{eff}}$ (0.1 $\mu \mathrm{W}<P_{\mathrm{eff}}<$ 0.8 $\mu \mathrm{W}$) as well as the variation of fall times of the devices as a function of increasing laser intensities was thoroughly examined and analyzed with a well established theoretical model [A. Rose, Phys. Rev. 97, 322 (1955)]. Our results indicate the possibility of achieving stable ${\mathrm{MoS}}_2$ based detectors with high photoresponsivities ($R$) $\sim {10}^2\mathrm{A}/\mathrm{W}$ and shot noise limited detectivities ($D$) $\sim {10}^{11}$ Jones, under ambient conditions and beyond room temperatures.

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• Electrical conductivity
• Electrical properties
• Optical conductivity
• Optoelectronics
• Photoconductivity
• Photocurrent