${\mathrm{SrRuO}}_3$, a $4d$ transition metal oxide, has gained significant interest due to its electronic and magnetic properties, which become increasingly intriguing in the ultrathin limit. By interfacing ultrathin ${\mathrm{SrRuO}}_3$ with ${\mathrm{SrIrO}}_3$, we successfully stabilize its metallic and ferromagnetic states down to the monolayer limit. ARPES measurements confirm the metallic band structure and characteristic band crossings near the Fermi level in ultrathin ${\mathrm{SrRuO}}_3$. Furthermore, the interfacial effect in ultrathin ${\mathrm{SrRuO}}_3$/${\mathrm{SrIrO}}_3$ heterostructures significantly modulates the anomalous Hall effect (AHE), maintaining a robust negative signal over a wide range of temperature and thickness, which differs significantly from the behavior observed in single ${\mathrm{SrRuO}}_3$ films. These results demonstrate that interfacing ${\mathrm{SrIrO}}_3$ can effectively control the electronic and magnetic states of ultrathin ${\mathrm{SrRuO}}_3$, providing new opportunities for exploring quantum phenomena in ultrathin oxide films.

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• Anomalous Hall effect
• Magnetism
• Topological Hall effect
• Transition metal oxides
• Weyl semimetal