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    Enhanced superconductivity in PbTe-In hybrids

    Zuhan Geng1,*, Fangting Chen1,*, Yichun Gao1,*, Lining Yang1,*, Yuhao Wang1, Shuai Yang1, Shan Zhang1, Zonglin Li1, Wenyu Song1 et al.

    Jiaye Xu1, Zehao Yu1, Ruidong Li1, Zhaoyu Wang1, Xiao Feng1,2,3,4, Tiantian Wang2,4, Yunyi Zang2,4, Lin Li2, Runan Shang2,4, Qi-Kun Xue1,2,3,4,5, Ke He1,2,3,4,†, and Hao Zhang1,2,3,‡

    • *These authors contributed equally to this work.
    • †Contact author: kehe@tsinghua.edu.cn
    • ‡Contact author: hzquantum@mail.tsinghua.edu.cn

    Phys. Rev. Materials 9, 084802 – Published 25 August, 2025

    DOI: https://doi.org/10.1103/8czc-tn4z

    Abstract

    We report the realization of epitaxial indium thin films on PbTe nanowires. The film is continuous and forms an atomically sharp interface with PbTe. Tunneling devices reveal a hard superconducting gap. The gap size, 1.08–1.18 meV, is twice as large as bulk indium's (∼0.5 meV), due to the presence of PbTe. A similar enhancement is also observed in the critical temperature of In on a PbTe substrate. Subgap peaks appear at finite magnetic fields. The effective g factor (15–45) is notably enhanced compared to bare PbTe wires (<10) due to the presence of In, differing from Al hybrids. Josephson devices exhibit gate-tunable supercurrents. The PbTe-In hybrid enhances the properties of both the superconductivity of In and g factors of PbTe, and thus may enable exotic phases of matter such as topological superconductivity.

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